BMS4003

$0.93

Description：MOSFET N-CH 100V 18A TO220ML
Series：-
Mfr：onsemi
Package：Bulk

SKU:4a629afa4cb6 Category: Single FETs, MOSFETs Brand: onsemi

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Product introduction

BMS4003 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET N-CH 100V 18A TO220ML. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for BMS4003

Description：MOSFET N-CH 100V 18A TO220ML
Series：-
Mfr：onsemi
Package：Bulk
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：18A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：65mOhm @ 9A, 10V
Vgs(th) (Max) @ Id：5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：11.4 nC @ 10 V
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：680 pF @ 20 V
FET Feature：-
Power Dissipation (Max)：2W (Ta), 25W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-220ML
Package / Case：TO-220-3 Full Pack

Single FETs, MOSFETs datasheet and documents for BMS4003

BMS4003

Single FETs, MOSFETs Overview

The BMS4003 is an N-channel silicon MOSFET manufactured by SANYO Semiconductors, designed as a general-purpose switching device. It features a drain-to-source voltage rating of 100 V and a continuous DC drain current capacity of 18 A at a case temperature of 25°C. The device exhibits a typical on-resistance of 50 mΩ and an input capacitance of 680 pF. It operates with a 10 V gate drive and supports a single-pulse avalanche energy of 53 mJ.

Single FETs, MOSFETs Feature Summary

N-channel silicon construction optimized for general-purpose switching applications
Low static drain-to-source on-state resistance for efficient conduction
High pulse drain current capability suitable for demanding transient loads

Single FETs, MOSFETs Applications

General electronics equipment including home appliances and office equipment
Audio-visual equipment signal processing
Communication device power management

Single FETs, MOSFETs Procurement Notes

Verify the manufacturer origin carefully, as the datasheet identifies SANYO Semiconductors while the prompt specifies onsemi. Confirm the package type matches TO-220ML(LS) requirements. Ensure the design accounts for the specified absolute maximum ratings to prevent exceeding thermal or electrical limits during operation.

Single FETs, MOSFETs Selection Notes

Select this component for circuits requiring a 100 V breakdown voltage and moderate current handling up to 18 A. Consider the 50 mΩ on-resistance for power loss calculations. Verify that the 10 V gate drive requirement aligns with the control logic levels available in the target system design.

Single FETs, MOSFETs Part Context

This device belongs to the category of N-channel silicon MOSFETs intended for general-purpose switching. It is packaged in the TO-220ML(LS) form factor, also known as SC-67 or SOT-186A. The product documentation indicates it is intended for standard electronic equipment rather than specialized high-reliability sectors.