BQ4010YMA-150N

Memory IC Overview

The BQ4010YMA-150N is a nonvolatile SRAM IC organized as 8,192 words by 8 bits (65,536-bit capacity). It operates with a nominal supply voltage of 5 V and supports a 10% input tolerance. The device features a maximum access time of 150 ns and functions within an industrial temperature range of -40°C to 85°C. It utilizes a 28-pin DIP module package.

Memory IC Feature Summary

• Provides reliable nonvolatility through integral lithium energy source coupled with standard CMOS SRAM write cycles.
• Features automatic write-protection during power-up and power-down cycles to prevent data corruption.
• Maintains conventional SRAM operation including single unlimited write cycles without EEPROM limitations.

Memory IC Applications

• Data retention in systems requiring persistent storage without external circuitry
• Industrial applications operating within extended temperature ranges
• Systems utilizing 5V logic with 10% supply tolerance

Memory IC Procurement Notes

Verify the obsolete status of this component before procurement planning. Confirm that the specific ordering suffix matches the required voltage tolerance and temperature grade. Ensure design migration strategies are in place due to discontinuation. Validate compatibility with existing system interfaces and mechanical constraints prior to finalizing any acquisition or replacement decisions.

Memory IC Selection Notes

Select this part for designs requiring nonvolatile memory with standard SRAM speed and interface characteristics. The Y suffix indicates suitability for 5V systems with 10% supply tolerance. The N suffix denotes the industrial temperature range. Consider the 150 ns access time when evaluating system timing requirements against available alternatives.

Memory IC Part Context

This component belongs to the bq4010/Y/LY family of nonvolatile SRAMs manufactured by Texas Instruments. The family includes variants with different voltage tolerances and access speeds. This specific model represents the industrial-grade option designed for robust performance in demanding environments while maintaining data integrity over long periods.

Memory IC Replacement Considerations

Public confirmed substitute part numbers include DS1250AB-70+.

Memory IC FAQ

How does the device handle power failure events?

The control circuitry monitors the VCC supply and automatically write-protects the SRAM when voltage falls below the threshold, switching to the internal lithium backup to sustain memory until power returns.

What is the data retention capability of the internal battery?

The integral lithium coin cells provide data retention for at least 10 years in the absence of system power.