BS108,126

Single FETs, MOSFETs Overview

The BS108,126 is an N-channel enhancement mode vertical D-MOS transistor manufactured by NXP Semiconductors. It is designed for high voltage and high speed switching applications. The device features a logic level gate drive capability, allowing it to be driven directly from standard logic families. Key electrical characteristics include a drain-source breakdown voltage of 200V and a continuous drain current rating of 250mA. The component is supplied in a SOT-23 surface-mount package.

Single FETs, MOSFETs Feature Summary

• N-channel enhancement mode vertical D-MOS construction
• Logic level gate drive operation
• High voltage switching capability

Single FETs, MOSFETs Applications

• Line drivers
• Relay drivers
• CMOS logic interfaces
• Microprocessor or TTL to high voltage interface circuits
• High voltage display drivers

Single FETs, MOSFETs Procurement Notes

Verify the manufacturer designation on the datasheet header, as this part number was originally developed by Motorola and later transferred to NXP Semiconductors. Confirm the specific tape and reel packaging configuration associated with the ',126' suffix during procurement. Ensure the ordering part number matches the required package style and quantity format specified in the official documentation.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring a compact N-channel MOSFET with high voltage blocking capability. The logic level gate threshold allows direct interfacing with low voltage control signals without additional driver stages. Consider the thermal dissipation requirements within the small SOT-23 package when designing for continuous current loads near the maximum rated drain current.

Single FETs, MOSFETs Part Context

The BS108 belongs to a family of small signal power MOSFETs designed for general-purpose switching. Originally introduced by Motorola, the product line was integrated into NXP Semiconductors' portfolio following corporate restructuring. This specific variant utilizes a vertical D-MOS technology to achieve high breakdown voltages in a miniature surface-mount footprint suitable for dense PCB layouts.

Single FETs, MOSFETs Replacement Considerations

Compatible equivalents include the ON Semiconductor BS108G and the General Semiconductor BS108. Verify pinout compatibility and absolute maximum ratings before substitution. Cross-reference with other N-channel 200V logic-level MOSFETs if exact matches are unavailable.