BS170-D27Z

$0.37

Description：MOSFET N-CH 60V 500MA TO92-3
Series：-
Mfr：onsemi
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:c6ff23130962 Category: Single FETs, MOSFETs Brand: onsemi

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Product introduction

BS170-D27Z is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET N-CH 60V 500MA TO92-3. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for BS170-D27Z

Description：MOSFET N-CH 60V 500MA TO92-3
Series：-
Mfr：onsemi
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：500mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：5Ohm @ 200mA, 10V
Vgs(th) (Max) @ Id：3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：40 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：830mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-92-3
Package / Case：TO-226-3, TO-92-3 (TO-226AA) Formed Leads

Single FETs, MOSFETs datasheet and documents for BS170-D27Z

BS170-D27Z

Single FETs, MOSFETs Overview

The BS170-D27Z is an N-channel enhancement mode field effect transistor manufactured by onsemi using proprietary DMOS technology. It features a TO-92 package with forming leads and tape & reel shipping. Key electrical parameters include a drain-source voltage of 60 V, continuous drain current of 500 mA, and maximum power dissipation of 830 mW at 25°C. The device exhibits a gate threshold voltage range of 0.8 to 3 V and a static drain-source on-resistance up to 5 Ω at 10 V gate drive.

Single FETs, MOSFETs Feature Summary

High density cell design for low on-state resistance
Voltage controlled small signal switching capability
Rugged and reliable construction suitable for general purpose applications

Single FETs, MOSFETs Applications

Small servo motor control
Power MOSFET gate drivers
General purpose switching applications

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix D27Z corresponds to the required TO-92 forming lead configuration and tape & reel packaging format. Confirm that the component meets Pb-Free requirements as specified in the manufacturer's documentation. Ensure compatibility with standard through-hole assembly processes for the TO-92 case outline.

Single FETs, MOSFETs Selection Notes

Select this component for low voltage and low current applications requiring fast switching performance. Consider the thermal resistance and power dissipation limits when designing heat management solutions. Verify that the gate threshold voltage characteristics align with the driving circuit logic levels for reliable turn-on and turn-off operation.

Single FETs, MOSFETs Part Context

This part belongs to the BS170 family of N-channel enhancement mode field effect transistors. It shares core electrical specifications with the MMBF170 variant, which utilizes a SOT-23 surface mount package. The BS170 series is designed to minimize on-state resistance while providing rugged performance for small signal applications.