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BS2114F-E2 is listed in the Gate Driver range at ChipApex. The manufacturer field lists Rohm Semiconductor. Its product description is IC GATE DRVR HI/LOW SIDE 8SOIC. Review the specifications below when checking this part for your BOM.
The BS2114F-E2 is a high-voltage gate driver IC from ROHM Semiconductor, designed for driving IGBTs and N-channel MOSFETs. It features a dual-driver configuration in an 8-SOP surface-mount package. The device supports a maximum high-side voltage of 600 V with a supply voltage range of 10 V to 18 V (up to 20 V per some distributor listings). Key electrical parameters include a peak output current of 130 mA, typical rise/fall times of 200 ns/100 ns, and propagation delays up to 320 ns/330 ns. It operates within a temperature range of -40°C to +125°C.
Verify component authenticity through authorized distributors or the manufacturer directly. Confirm RoHS compliance status and check for specific packaging variants such as tape-and-reel options. Ensure the sourcing channel provides valid traceability documentation for quality assurance purposes.
Select this component when a robust solution for 600V half-bridge topologies is required. Consider its EMI reduction capabilities for noise-sensitive environments. Verify that the 130 mA drive current meets the gate charge requirements of the target IGBT or MOSFET devices.
This part belongs to the BS21xx series of high-voltage gate drivers from ROHM Semiconductor. These components are engineered for reliability in industrial power electronics, offering integrated protection features and compact SOP-8 packaging to facilitate space-constrained PCB layouts.
Check for pin-compatible alternatives within the same ROHM family or other manufacturers offering similar 600V dual-channel drivers. Ensure equivalent supply voltage ranges and drive currents before substitution.
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