Gate Driver BS2114F-E2 product image

BS2114F-E2

$0.47
  • Description:IC GATE DRVR HI/LOW SIDE 8SOIC
  • Series:-
  • Mfr:Rohm Semiconductor
  • Package:Tape & Reel (TR)

SKU:395d84a4b532 Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

BS2114F-E2 is listed in the Gate Driver range at ChipApex. The manufacturer field lists Rohm Semiconductor. Its product description is IC GATE DRVR HI/LOW SIDE 8SOIC. Review the specifications below when checking this part for your BOM.

Gate Driver specifications for BS2114F-E2

  • Description:IC GATE DRVR HI/LOW SIDE 8SOIC
  • Series:-
  • Mfr:Rohm Semiconductor
  • Package:Tape & Reel (TR)
  • Driven Configuration:High-Side or Low-Side
  • Channel Type:Independent
  • Number of Drivers:2
  • Gate Type:IGBT, MOSFET (N-Channel)
  • Voltage - Supply:10V ~ 20V
  • Logic Voltage - VIL, VIH:0.8V, 2.6V
  • Current - Peak Output (Source, Sink):-
  • Input Type:Inverting
  • Rise / Fall Time (Typ):30ns, 30ns
  • Operating Temperature:-40°C ~ 125°C (TA)
  • Mounting Type:Surface Mount
  • Package / Case:8-SOIC (0.173", 4.40mm Width)
  • Supplier Device Package:8-SOP
  • Grade:-
  • Qualification:-
  • High Side Voltage - Max (Bootstrap):600 V

Gate Driver datasheet and documents for BS2114F-E2

BS2114F-E2

Gate Driver Overview

The BS2114F-E2 is a high-voltage gate driver IC from ROHM Semiconductor, designed for driving IGBTs and N-channel MOSFETs. It features a dual-driver configuration in an 8-SOP surface-mount package. The device supports a maximum high-side voltage of 600 V with a supply voltage range of 10 V to 18 V (up to 20 V per some distributor listings). Key electrical parameters include a peak output current of 130 mA, typical rise/fall times of 200 ns/100 ns, and propagation delays up to 320 ns/330 ns. It operates within a temperature range of -40°C to +125°C.

Gate Driver Feature Summary

  • Optimized innovative gate driver technology designed to minimize electromagnetic interference (EMI) and optimize power supply performance.
  • Capable of driving both high-side and low-side switches with independent channel control for half-bridge applications.
  • Integrated design suitable for direct interface with logic-level inputs without requiring external level shifting components.

Gate Driver Applications

  • Industrial motor drives and inverters
  • Switching power supplies and DC-DC converters
  • High-voltage AC/DC conversion systems

Gate Driver Procurement Notes

Verify component authenticity through authorized distributors or the manufacturer directly. Confirm RoHS compliance status and check for specific packaging variants such as tape-and-reel options. Ensure the sourcing channel provides valid traceability documentation for quality assurance purposes.

Gate Driver Selection Notes

Select this component when a robust solution for 600V half-bridge topologies is required. Consider its EMI reduction capabilities for noise-sensitive environments. Verify that the 130 mA drive current meets the gate charge requirements of the target IGBT or MOSFET devices.

Gate Driver Part Context

This part belongs to the BS21xx series of high-voltage gate drivers from ROHM Semiconductor. These components are engineered for reliability in industrial power electronics, offering integrated protection features and compact SOP-8 packaging to facilitate space-constrained PCB layouts.

Gate Driver Replacement Considerations

Check for pin-compatible alternatives within the same ROHM family or other manufacturers offering similar 600V dual-channel drivers. Ensure equivalent supply voltage ranges and drive currents before substitution.

BS2114F-E2BS2114F-E2
$0.47
Buy Now

Recent News