Single Bipolar Transistors BSX62-10 product image

BSX62-10

  • Description:TRANS NPN 40V 3A TO-39
  • Series:-

SKU:27085c77ef08 Category: Brand:

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BSX62-10 is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Central Semiconductor Corp. Its product description is TRANS NPN 40V 3A TO-39. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for BSX62-10

  • Description:TRANS NPN 40V 3A TO-39
  • Series:-
  • Mfr:Central Semiconductor Corp
  • Package:Bulk
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):3:00 AM
  • Voltage - Collector Emitter Breakdown (Max):40 V
  • Vce Saturation (Max) @ Ib, Ic:800mV @ 200mA, 2A
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:63 @ 1A, 1V
  • Power - Max:5 W
  • Frequency - Transition:30MHz
  • Operating Temperature:-65°C ~ 200°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-205AD, TO-39-3 Metal Can
  • Supplier Device Package:TO-39
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for BSX62-10

BSX62-10

Single Bipolar Transistors Overview

The BSX62-10 is an NPN silicon transistor housed in a TO-39 metal case. It supports a collector current of 3.0 A and a collector-emitter voltage of 40 V. The device features a power dissipation rating of 5.0 W at 25°C case temperature, with a thermal resistance of 35 °C/W. Operating junction temperatures range from -65 to +200 °C. Electrical characteristics include a minimum DC current gain (hFE) of 63 to 160 at 1.0 A collector current for the -10 suffix variant.

Single Bipolar Transistors Feature Summary

  • High current capability suitable for demanding general-purpose applications
  • Robust metal TO-39 package construction for effective heat dissipation
  • Wide operating temperature range extending up to +200 °C

Single Bipolar Transistors Applications

  • General purpose switching circuits requiring high collector current
  • Amplifier stages utilizing the metal can package for thermal stability

Single Bipolar Transistors Procurement Notes

Verify component status carefully as this part is classified as End of Life by Central Semiconductor Corp. Last purchase orders must be placed within six months of the official notice date, with final shipments occurring twelve months after notification. Minimum order quantities may apply during the transition period. Confirm plating options such as PBFREE or TIN/LEAD if required for specific assembly processes before ordering.

Single Bipolar Transistors Selection Notes

Select this component when a high-current NPN transistor in a through-hole metal package is required. Ensure the circuit design accommodates the 40 V collector-emitter voltage limit and the 5.0 W power dissipation capability. Verify that the hFE range of 63 to 160 meets the biasing requirements for the intended application. Consider the physical dimensions of the TO-39 case for board layout constraints.

Single Bipolar Transistors Part Context

This device belongs to the BSX series of NPN silicon transistors manufactured by Central Semiconductor Corp. The series is designed for applications necessitating high collector currents. The BSX62 variant specifically offers a 40 V collector-emitter voltage rating, distinguishing it from the higher-voltage BSX63 model which supports 60 V. Both share identical mechanical packaging and maximum current ratings.

Single Bipolar Transistors Replacement Considerations

No direct replacement part numbers are provided by the manufacturer for the BSX62-10. Customers are advised to submit technical inquiries via the manufacturer's online portal to locate alternate sources or compatible alternatives.

BSX62-10BSX62-10

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