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BZT52B10-HE3-08 is listed in the Single Zener Diodes range at ChipApex. The manufacturer field lists Vishay General Semiconductor - Diodes Division. Its product description is DIODE ZENER 10V 410MW SOD123. Review the specifications below when checking this part for your BOM.
The BZT52B10-HE3-08 is a silicon planar Zener diode from the Vishay BZT52 series, housed in an SOD-123 surface-mount package. It provides a nominal Zener voltage of 10 V with a tight tolerance of ±2%. The device operates within a junction temperature range of -55 °C to +150 °C and features AEC-Q101 qualification for automotive reliability. Key electrical parameters include a maximum reverse leakage current of 100 nA at 9 V, a dynamic resistance of 15 Ω at a test current of 5 mA, and a temperature coefficient ranging from +5 to +8 × 10⁻⁴/°C.
Verify that the ordering code matches the specific suffix requirements for your application. Confirm the component meets RoHS3 compliance standards and holds valid AEC-Q101 certification if used in automotive contexts. Ensure the supplier provides traceability documentation consistent with Vishay's manufacturing records.
Select this component when a 10 V reference requires tighter than standard tolerance. The HE3_A suffix indicates automotive-grade qualification and enhanced material categorization. Verify thermal management capabilities against the specified power dissipation limits under expected operating conditions.
This part belongs to the BZT52 family of small-signal Zener diodes manufactured by Vishay General Semiconductor - Diodes Division. The series utilizes silicon planar technology and offers various voltage grades according to the E24 standard. The BZT52B variant specifically denotes the tighter ±2% tolerance band compared to the standard C grade.
BZT52B10-E3-08
The dynamic resistance is 15 Ω, measured at a test current of 5 mA.
Yes, it is AEC-Q101 qualified and designed for automotive environments.
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