Diode Arrays CMXSH-3 TR PBFREE product image

CMXSH-3 TR PBFREE

$0.32
  • Description:DIODE ARR SCHOTT 30V 100MA SOT26
  • Series:-

SKU:60ab10973025 Category: Brand:

  
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CMXSH-3 TR PBFREE is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Central Semiconductor Corp. Its product description is DIODE ARR SCHOTT 30V 100MA SOT26. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for CMXSH-3 TR PBFREE

  • Description:DIODE ARR SCHOTT 30V 100MA SOT26
  • Series:-
  • Mfr:Central Semiconductor Corp
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Diode Configuration:3 Independent
  • Technology:Schottky
  • Voltage - DC Reverse (Vr) (Max):30 V
  • Current - Average Rectified (Io) (per Diode):100mA
  • Voltage - Forward (Vf) (Max) @ If:1 V @ 100 mA
  • Speed:Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr):5 ns
  • Current - Reverse Leakage @ Vr:500 nA @ 25 V
  • Operating Temperature - Junction:-65°C ~ 150°C
  • Mounting Type:Surface Mount
  • Package / Case:SOT-23-6
  • Supplier Device Package:SOT-26
  • Grade:-
  • Qualification:-

Diode Arrays datasheet and documents for CMXSH-3 TR PBFREE

CMXSH-3 TR PBFREE

Diode Arrays Overview

The CMXSH-3 TR PBFREE is a surface mount silicon triple isolated Schottky diode manufactured by Central Semiconductor Corp. It contains three isolated switching diodes in an SOT-26 package with a marking code of XH3. Key electrical parameters include a peak repetitive reverse voltage (VRRM) of 30 V, continuous forward current (IF) of 100 mA, and peak forward surge current (IFSM) of 750 mA. The device operates within a junction temperature range of -65 to +150 °C. Forward voltage drop ranges from 0.29 V at 2.0 mA to 1.00 V at 100 mA, with a typical reverse leakage current of 500 nA at 25 V.

Diode Arrays Feature Summary

  • Integrates three electrically isolated Schottky diodes within a single compact SOT-26 surface mount package
  • Utilizes epitaxial planar process technology for low forward voltage drop performance
  • Features high thermal stability with a maximum operating junction temperature of +150 °C

Diode Arrays Applications

  • Low forward voltage drop switching applications
  • Surface mount circuit designs requiring multiple isolated diodes
  • High reliability electronic assemblies

Diode Arrays Procurement Notes

Verify the specific ordering suffix when purchasing. The manufacturer specifies that adding 'PBFREE' indicates lead-free plating, while 'TIN/LEAD' denotes tin/lead plating options. Confirm the exact part number matches the required plating specification to ensure compliance with project material constraints and environmental regulations.

Diode Arrays Selection Notes

Select this component when a design requires three independent Schottky diodes in a minimal footprint. The SOT-26 package provides isolation between internal diodes, eliminating the need for external isolation components. Ensure the 30 V reverse voltage rating and 100 mA continuous current capacity align with the circuit's operational limits and thermal dissipation requirements.

Diode Arrays Part Context

This component belongs to Central Semiconductor's line of surface mount silicon Schottky diodes. It is designed for applications prioritizing low forward voltage characteristics and space efficiency. The triple isolated configuration distinguishes it from standard single or dual diode packages, offering a consolidated solution for complex rectification or switching needs.

Diode Arrays Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. Verify pinout compatibility and electrical ratings if considering alternative manufacturers.

Diode Arrays FAQ

What is the marking code on the CMXSH-3 package?

The marking code on the SOT-26 package is XH3.

How are the pins configured in the SOT-26 case?

Pin 1 is Anode D1, Pin 2 is Anode D2, Pin 3 is Anode D3, Pin 4 is Cathode D3, Pin 5 is Cathode D2, and Pin 6 is Cathode D1.

What is the typical reverse leakage current at 25°C?

The typical reverse leakage current (IR) at VR=25V and TA=25°C is 500 nA.

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