Memory IC CY7C1263XV18-633BZXC product image

CY7C1263XV18-633BZXC

$90.00
  • Description:IC SRAM 36MBIT PAR 165FBGA
  • Series:-
  • Mfr:Cypress Semiconductor Corp
  • Package:Bulk

SKU:afe7ad4d2228 Category: Brand:

  
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CY7C1263XV18-633BZXC is listed in the Memory IC range at ChipApex. The manufacturer field lists Cypress Semiconductor Corp. Its product description is IC SRAM 36MBIT PAR 165FBGA. Review the specifications below when checking this part for your BOM.

Memory IC specifications for CY7C1263XV18-633BZXC

  • Description:IC SRAM 36MBIT PAR 165FBGA
  • Series:-
  • Mfr:Cypress Semiconductor Corp
  • Package:Bulk
  • Memory Type:Volatile
  • Memory Format:SRAM
  • Technology:SRAM - Synchronous, QDR II+
  • Memory Size:36Mbit
  • Memory Organization:2M x 18
  • Memory Interface:Parallel
  • Clock Frequency:633 MHz
  • Write Cycle Time - Word, Page:-
  • Voltage - Supply:1.7V ~ 1.9V
  • Operating Temperature:0°C ~ 70°C (TA)
  • Mounting Type:Surface Mount
  • Package / Case:165-LBGA
  • Supplier Device Package:165-FBGA (13x15)
  • Access Time:-

Memory IC datasheet and documents for CY7C1263XV18-633BZXC

CY7C1263XV18-633BZXC

Memory IC Overview

The CY7C1263XV18 is a 36-Mbit QDR II+ Xtreme SRAM with a 2 M × 18 organization. It features a four-word burst architecture and supports a maximum clock frequency of 633 MHz. The device utilizes double data rate interfaces on both read and write ports, transferring data at 1266 MHz. It operates with a core voltage of 1.8 V ± 0.1 V and an I/O voltage range of 1.4 V to 1.6 V. The component is housed in a 165-ball FBGA package measuring 13 × 15 × 1.4 mm.

Memory IC Feature Summary

  • Separate independent read and write data ports support concurrent transactions without bus turnaround.
  • Four-word burst architecture reduces address bus frequency while maximizing data throughput.
  • Echo clocks (CQ and CQ) simplify data capture in high-speed systems.
  • Programmable output impedance via ZQ pin ensures accurate signal integrity.

Memory IC Applications

  • High-bandwidth networking equipment
  • Telecommunications infrastructure
  • Data center storage controllers

Memory IC Procurement Notes

Verify the specific speed grade suffix matches system timing requirements. Confirm that the I/O supply voltage aligns with the 1.4 V to 1.6 V specification. Ensure the 165-ball FBGA footprint matches the PCB layout. Check for Pb-free compliance if required by environmental standards.

Memory IC Selection Notes

Select this part for applications requiring high bandwidth and low latency. The four-word burst mode is suitable for reducing address bus activity. Consider the 2.5 cycle read latency when designing control logic. Verify power supply constraints for both core and I/O voltages before integration.

Memory IC Part Context

This component belongs to the QDR II+ Xtreme family developed by Cypress Semiconductor, now part of Infineon Technologies. It shares architectural similarities with other QDR devices but offers higher clock speeds. The family includes variants with different organizations and speeds, such as the CY7C1265XV18.

Memory IC Replacement Considerations

CY7C1265XV18: Offers 1 M × 36 organization instead of 2 M × 18. Both share the same package and interface characteristics. Verify width expansion compatibility if replacing with the 36-bit variant.

Memory IC FAQ

How does the DOFF pin affect operation?

Asserting DOFF HIGH enables normal QDR II+ Xtreme operation with 2.5 cycle read latency. Asserting it LOW disables the PLL, causing the device to behave like a QDR I device with one cycle read latency.

What is the function of the ZQ pin?

The ZQ pin is used for impedance matching. An external resistor connected between ZQ and ground tunes the output driver impedance to match the system data bus.

CY7C1263XV18-633BZXCCY7C1263XV18-633BZXC
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