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CY7C1312KV18-333BZC is listed in the Memory IC range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is IC SRAM 18MBIT PARALLEL 165FBGA. Review the specifications below when checking this part for your BOM.
The CY7C1312KV18-333BZC is a QDR-II synchronous static random-access memory manufactured by Infineon Technologies. It features a storage density of 18 Mbit organized as 1M x 18. The device supports a maximum clock frequency of 300 MHz and operates within a voltage range of 1.7 V to 1.9 V. It utilizes a parallel interface and is housed in an FBGA-165 package suitable for surface mount installation. The component functions within a commercial temperature range of 0°C to +70°C.
Verify the specific speed grade suffix, as official records indicate the -300 variant rather than -333. Confirm RoHS compliance status directly with the manufacturer due to conflicting documentation regarding lead content. Ensure the procurement channel provides valid traceability for this discontinued or limited-supply component type.
Select this part when a 18 Mbit capacity with independent read/write ports is required. The 165-ball FBGA package suits space-constrained designs. Verify that the system timing requirements align with the 300 MHz specification. Consider alternative densities if higher throughput is needed beyond the QDR-II family capabilities.
This component belongs to the QDR-II SRAM family designed for applications demanding high bandwidth and deterministic latency. The series offers various densities and speeds, all sharing common interface protocols. This specific model represents the 18 Mbit segment of the portfolio, balancing capacity with speed for embedded memory solutions.
Check for CY7C1312KV18-300BZC as a confirmed speed-grade match. Evaluate CY7C1512KV18-333BZC only if QDR-II+ features are acceptable and pin compatibility is verified. No direct drop-in replacements exist without schematic review.
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