Memory IC CY7C1312KV18-333BZC product image

CY7C1312KV18-333BZC

$27.50
  • Description:IC SRAM 18MBIT PARALLEL 165FBGA
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tray

SKU:6fa1a38c64b5 Category: Brand:

  
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CY7C1312KV18-333BZC is listed in the Memory IC range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is IC SRAM 18MBIT PARALLEL 165FBGA. Review the specifications below when checking this part for your BOM.

Memory IC specifications for CY7C1312KV18-333BZC

  • Description:IC SRAM 18MBIT PARALLEL 165FBGA
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tray
  • Memory Type:Volatile
  • Memory Format:SRAM
  • Technology:SRAM - Synchronous, QDR II
  • Memory Size:18Mbit
  • Memory Organization:1M x 18
  • Memory Interface:Parallel
  • Clock Frequency:333 MHz
  • Write Cycle Time - Word, Page:-
  • Voltage - Supply:1.7V ~ 1.9V
  • Operating Temperature:0°C ~ 70°C (TA)
  • Mounting Type:Surface Mount
  • Package / Case:165-LBGA
  • Supplier Device Package:165-FBGA (13x15)
  • Access Time:-

Memory IC datasheet and documents for CY7C1312KV18-333BZC

CY7C1312KV18-333BZC

Memory IC Overview

The CY7C1312KV18-333BZC is a QDR-II synchronous static random-access memory manufactured by Infineon Technologies. It features a storage density of 18 Mbit organized as 1M x 18. The device supports a maximum clock frequency of 300 MHz and operates within a voltage range of 1.7 V to 1.9 V. It utilizes a parallel interface and is housed in an FBGA-165 package suitable for surface mount installation. The component functions within a commercial temperature range of 0°C to +70°C.

Memory IC Feature Summary

  • Supports high-speed data transfer via the QDR-II architecture with a 300 MHz operating frequency
  • Provides independent read and write ports through separate I/O configuration
  • Operates on a single 1.8V power supply within specified voltage limits

Memory IC Applications

  • High-performance networking equipment requiring low-latency buffering
  • Telecommunications infrastructure utilizing packet processing
  • Industrial control systems needing fast synchronous memory access

Memory IC Procurement Notes

Verify the specific speed grade suffix, as official records indicate the -300 variant rather than -333. Confirm RoHS compliance status directly with the manufacturer due to conflicting documentation regarding lead content. Ensure the procurement channel provides valid traceability for this discontinued or limited-supply component type.

Memory IC Selection Notes

Select this part when a 18 Mbit capacity with independent read/write ports is required. The 165-ball FBGA package suits space-constrained designs. Verify that the system timing requirements align with the 300 MHz specification. Consider alternative densities if higher throughput is needed beyond the QDR-II family capabilities.

Memory IC Part Context

This component belongs to the QDR-II SRAM family designed for applications demanding high bandwidth and deterministic latency. The series offers various densities and speeds, all sharing common interface protocols. This specific model represents the 18 Mbit segment of the portfolio, balancing capacity with speed for embedded memory solutions.

Memory IC Replacement Considerations

Check for CY7C1312KV18-300BZC as a confirmed speed-grade match. Evaluate CY7C1512KV18-333BZC only if QDR-II+ features are acceptable and pin compatibility is verified. No direct drop-in replacements exist without schematic review.

CY7C1312KV18-333BZCCY7C1312KV18-333BZC
$27.50
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