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CY7C1314BV18-250BZC is listed in the Memory IC range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is IC SRAM 18MBIT PAR 165FBGA. Review the specifications below when checking this part for your BOM.
The CY7C1314BV18-250BZC is a 18-Mbit QDR-II SRAM with a 512K x 36 organization. It operates at a maximum frequency of 250 MHz with a core voltage of 1.8V and IO voltage of 1.4V to VDD. The device features separate read and write ports, supporting concurrent transactions and a 2-word burst architecture. It utilizes DDR interfaces on both ports for data transfer at 500 MHz. The component is housed in a 165-Ball FBGA package measuring 13 x 15 x 1.4 mm.
Verify the specific suffix 'BV18' against current Infineon documentation to confirm lead-free status and exact electrical tolerances. Confirm package dimensions match the 165-Ball FBGA specification. Ensure supply chain sources provide valid RoHS compliance certificates if required by local regulations.
Select this component when system design requires simultaneous independent read and write operations without bus contention. The QDR-II architecture simplifies interface logic compared to common I/O devices. Verify that the host controller supports the required dual-clock input timing for precise DDR synchronization.
This part belongs to the Cypress/Infineon QDR-II SRAM family, designed for high-performance memory applications. It shares architectural similarities with the CY7C1310, CY7C1910, and CY7C1312 variants, differing primarily in data width and depth configurations while maintaining the same pinout and operational principles.
CY7C1314KV18-250BZC
The SRAM delivers the most recent information associated with the specified address location, including forwarding data from a write cycle initiated on the previous clock rise.
The ZQ pin is used to tune the device outputs to the system data bus impedance by connecting an external resistor between ZQ and ground.
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