Memory IC CY7C1314BV18-250BZC product image

CY7C1314BV18-250BZC

$28.60
  • Description:IC SRAM 18MBIT PAR 165FBGA
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tray

SKU:a7ef25af80f0 Category: Brand:

  
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CY7C1314BV18-250BZC is listed in the Memory IC range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is IC SRAM 18MBIT PAR 165FBGA. Review the specifications below when checking this part for your BOM.

Memory IC specifications for CY7C1314BV18-250BZC

  • Description:IC SRAM 18MBIT PAR 165FBGA
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tray
  • Memory Type:Volatile
  • Memory Format:SRAM
  • Technology:SRAM - Synchronous, QDR II
  • Memory Size:18Mbit
  • Memory Organization:512K x 36
  • Memory Interface:Parallel
  • Clock Frequency:250 MHz
  • Write Cycle Time - Word, Page:-
  • Voltage - Supply:1.7V ~ 1.9V
  • Operating Temperature:0°C ~ 70°C (TA)
  • Mounting Type:Surface Mount
  • Package / Case:165-LBGA
  • Supplier Device Package:165-FBGA (13x15)
  • Access Time:-

Memory IC datasheet and documents for CY7C1314BV18-250BZC

CY7C1314BV18-250BZC

Memory IC Overview

The CY7C1314BV18-250BZC is a 18-Mbit QDR-II SRAM with a 512K x 36 organization. It operates at a maximum frequency of 250 MHz with a core voltage of 1.8V and IO voltage of 1.4V to VDD. The device features separate read and write ports, supporting concurrent transactions and a 2-word burst architecture. It utilizes DDR interfaces on both ports for data transfer at 500 MHz. The component is housed in a 165-Ball FBGA package measuring 13 x 15 x 1.4 mm.

Memory IC Feature Summary

  • Separate independent read and write data ports eliminate bus turnaround requirements
  • Supports concurrent read and write transactions for maximized throughput
  • Echo clocks simplify data capture in high-speed systems
  • JTAG 1149.1 compatible test access port for boundary scan testing

Memory IC Applications

  • High-bandwidth networking equipment
  • Telecommunications infrastructure
  • Data communication systems requiring low latency

Memory IC Procurement Notes

Verify the specific suffix 'BV18' against current Infineon documentation to confirm lead-free status and exact electrical tolerances. Confirm package dimensions match the 165-Ball FBGA specification. Ensure supply chain sources provide valid RoHS compliance certificates if required by local regulations.

Memory IC Selection Notes

Select this component when system design requires simultaneous independent read and write operations without bus contention. The QDR-II architecture simplifies interface logic compared to common I/O devices. Verify that the host controller supports the required dual-clock input timing for precise DDR synchronization.

Memory IC Part Context

This part belongs to the Cypress/Infineon QDR-II SRAM family, designed for high-performance memory applications. It shares architectural similarities with the CY7C1310, CY7C1910, and CY7C1312 variants, differing primarily in data width and depth configurations while maintaining the same pinout and operational principles.

Memory IC Replacement Considerations

CY7C1314KV18-250BZC

Memory IC FAQ

How does the device handle concurrent read and write accesses to the same address?

The SRAM delivers the most recent information associated with the specified address location, including forwarding data from a write cycle initiated on the previous clock rise.

What is the function of the ZQ pin?

The ZQ pin is used to tune the device outputs to the system data bus impedance by connecting an external resistor between ZQ and ground.

CY7C1314BV18-250BZCCY7C1314BV18-250BZC
$28.60
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