Memory IC CY7C1521KV18-250BZXC product image

CY7C1521KV18-250BZXC

  • Description:IC SRAM 72MBIT PAR 165FBGA
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tray

SKU:7795f1359c8e Category: Brand:

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CY7C1521KV18-250BZXC is listed in the Memory IC range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is IC SRAM 72MBIT PAR 165FBGA. Review the specifications below when checking this part for your BOM.

Memory IC specifications for CY7C1521KV18-250BZXC

  • Description:IC SRAM 72MBIT PAR 165FBGA
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tray
  • Memory Type:Volatile
  • Memory Format:SRAM
  • Technology:SRAM - Synchronous, DDR II
  • Memory Size:72Mbit
  • Memory Organization:2M x 36
  • Memory Interface:Parallel
  • Clock Frequency:250 MHz
  • Write Cycle Time - Word, Page:-
  • Voltage - Supply:1.7V ~ 1.9V
  • Operating Temperature:0°C ~ 70°C (TA)
  • Mounting Type:Surface Mount
  • Package / Case:165-LBGA
  • Supplier Device Package:165-FBGA (13x15)
  • Access Time:-

Memory IC datasheet and documents for CY7C1521KV18-250BZXC

CY7C1521KV18-250BZXC

Memory IC Overview

The CY7C1521KV18-250BZXC is a QDR II static random-access memory (SRAM) manufactured by Infineon Technologies. It features a storage capacity of 72 Mbit organized as 4M x 18. The device supports a maximum clock frequency of 250 MHz with an access time of 450 ps. It operates within a voltage range of 1.7 V to 1.9 V and has a maximum power supply current of 640 mA. The component is designed for surface mount installation in a 165-ball FBGA package, suitable for commercial temperature ranges from 0°C to +70°C.

Memory IC Feature Summary

  • Supports Quad Data Rate second generation (QDR II) interface architecture for high-speed parallel data transfer.
  • Integrates on-chip clocking and control logic to simplify system design and reduce external component count.
  • Utilizes advanced 65-nm technology to achieve high performance with reduced power consumption compared to previous generations.

Memory IC Applications

  • High-performance networking equipment requiring low-latency packet buffering.
  • Telecommunications infrastructure systems utilizing synchronous data processing.
  • Industrial automation controllers needing fast memory access for real-time operations.

Memory IC Procurement Notes

Verify the specific suffix 'BZXC' against the official Infineon datasheet to confirm package type and lead finish specifications. Confirm end-of-life status and last-time-buy dates directly with the manufacturer or authorized distributors, as availability may be restricted. Ensure compliance with RoHS directives and check for any updated product qualification reports before finalizing procurement decisions.

Memory IC Selection Notes

Select this component when a 72 Mbit density with 18-bit width is required for QDR II applications. Compare the 250 MHz speed grade against system timing requirements. Evaluate the 165-ball FBGA footprint against PCB layout constraints. Consider the 1.8V operating voltage compatibility with existing system power rails and thermal management capabilities for the specified current draw.

Memory IC Part Context

This part belongs to the Infineon CY7C1521KV18 family of QDR II SRAMs. It shares architectural similarities with other members like the CY7C1412KV18 and CY7C1315KV18 but differs in density and organization. The KV18 series generally denotes 1.8V operation and specific pinout configurations common across the QDR II portfolio for interoperability in memory subsystem designs.

Memory IC Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Verify if older process node variants or different density options within the same family serve as functional equivalents based on specific system requirements.

CY7C1521KV18-250BZXCCY7C1521KV18-250BZXC

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