CY7C1568KV18-500BZXI

Memory IC Overview

The CY7C1568KV18-500BZXI is a 72-Mbit DDR II+ synchronous SRAM organized as 4M x 18. It supports a maximum operating frequency of 500 MHz, providing high bandwidth for data-intensive applications. The device features a two-word burst architecture with a 2.5-cycle read latency when the DOFF pin is asserted HIGH. It operates within a core voltage range of 1.7 V to 1.9 V and an I/O voltage range of 1.4 V to VDD. The component utilizes a 165-ball fine pitch ball grid array (FBGA) package measuring 13 x 15 x 1.4 mm.

Memory IC Feature Summary

• Supports double data rate interfaces transferring data at 1100 MHz using two input clocks for precise timing.
• Includes echo clocks (CQ and CQ) synchronized to input clocks to simplify data capture in high-speed systems.
• Features a valid data indicator (QVLD) that is edge-aligned with echo clocks to signal valid output data arrival.
• Incorporates programmable impedance control via the ZQ pin to match system data bus requirements.

Memory IC Applications

• High-bandwidth networking equipment requiring fast packet buffering
• Telecommunications infrastructure utilizing synchronous pipelined memory
• Industrial systems demanding reliable data storage with specific timing constraints

Memory IC Procurement Notes

Verify the exact speed grade suffix matches the required operational frequency, as the base model number may cover multiple clock speeds. Confirm the package type corresponds to the 165-ball FBGA configuration. Ensure the ordering suffix aligns with the desired lead-free status and industrial temperature rating specifications provided by the manufacturer.

Memory IC Selection Notes

Select this component for designs requiring high throughput with a two-word burst capability. Consider the 2.5-cycle read latency when designing the system interface logic. Evaluate the need for echo clocks and valid data indicators to manage signal integrity at high frequencies. Verify compatibility with HSTL input and output buffer standards for the target application environment.

Memory IC Part Context

This part belongs to the Cypress/Infineon DDR II+ SRAM family, which offers advanced synchronous peripheral circuitry integrated with an SRAM core. The series provides options for varying densities and organizations, including 4M x 18 and 2M x 36 configurations. These devices are designed for applications needing high-performance memory solutions with low power consumption characteristics.

Memory IC Replacement Considerations

The CY7C1570KV18 serves as a functional alternative within the same datasheet, offering a 2M x 36 organization instead of 4M x 18. Both parts share identical electrical characteristics and package dimensions, allowing for potential width expansion or density adaptation in compatible system designs.

Memory IC FAQ

How does the DOFF pin affect the read latency of the device?

When the DOFF pin is asserted HIGH, the device operates with a 2.5-cycle read latency. If DOFF is asserted LOW, the device behaves like a DDR I device with a 1-cycle read latency.

What is the function of the ZQ pin?

The ZQ pin is used for output impedance matching. An external resistor connected between ZQ and ground tunes the device outputs to the system data bus impedance, ensuring signal integrity.