CY7C2565KV18-400BZI

Memory IC Overview

The CY7C2565KV18-400BZI is a 72-Mbit QDR II+ Synchronous Pipelined SRAM with a 2M x 36 organization. It features separate independent read and write data ports supporting concurrent transactions. The device operates at a maximum clock frequency of 400 MHz, utilizing a four-word burst architecture with 2.5 cycle read latency. It employs Double Data Rate (DDR) interfaces on both ports for high bandwidth. Key electrical parameters include a core voltage of 1.8V ± 0.1V and an I/O voltage range of 1.4V to VDD. The component is housed in a 165-ball FBGA package measuring 13 x 15 x 1.4 mm.

Memory IC Feature Summary

• Supports concurrent read and write operations through separate dedicated data ports, eliminating the need for bus turnaround.
• Integrates On-Die Termination (ODT) for input signals to reduce external components and simplify board routing.
• Includes echo clocks and a valid data indicator to facilitate precise data capture in high-speed systems.
• Features programmable output impedance controlled by an external resistor for accurate signal matching.

Memory IC Applications

• High-bandwidth networking equipment requiring low-latency memory access
• Telecommunications infrastructure utilizing synchronous pipelined architectures
• Industrial control systems demanding full data coherency

Memory IC Procurement Notes

Verify that the specific suffix BZI corresponds to the required commercial temperature range and lead-free status as defined in the manufacturer's ordering guide. Confirm that the ODT pin configuration matches the system termination requirements during power-up initialization. Ensure the ZQ pin connection adheres to the specified resistance range for proper impedance calibration.

Memory IC Selection Notes

Select this component when a 72-Mbit capacity with a 36-bit word width is required for parallel interface applications. The QDR II+ architecture is suitable for designs needing independent read and write ports to maximize throughput. Consider the 165-ball FBGA package constraints and the 1.8V core voltage supply requirements during the schematic design phase.

Memory IC Part Context

This part belongs to the Cypress Semiconductor QDR II+ SRAM family, which includes variants such as the CY7C2561KV18, CY7C2576KV18, and CY7C2563KV18. These devices share the same architectural foundation but differ in memory organization and bit-width configurations. The family is designed to provide high-performance memory solutions for demanding synchronous applications.

Memory IC Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation.

Memory IC FAQ

How does the device handle concurrent read and write accesses?

The read and write ports operate independently. If both ports are selected simultaneously, arbitration depends on the previous state; if both are deselected, the read port takes priority.

What is the function of the DOFF pin?

The DOFF pin controls the Phase-Locked Loop (PLL). Asserting it LOW disables the PLL, causing the device to operate in QDR I mode with one-cycle latency.