Diode Arrays DCG010-TL-E product image

DCG010-TL-E

$0.33
  • Description:DIODE ARRAY GP 80V 100MA MCP
  • Series:-

SKU:ab4276cc48b5 Category: Brand:

  
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DCG010-TL-E is listed in the Diode Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is DIODE ARRAY GP 80V 100MA MCP. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for DCG010-TL-E

  • Description:DIODE ARRAY GP 80V 100MA MCP
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Cut Tape (CT),Bulk
  • Diode Configuration:1 Pair Common Cathode
  • Technology:Standard
  • Voltage - DC Reverse (Vr) (Max):80 V
  • Current - Average Rectified (Io) (per Diode):100mA
  • Voltage - Forward (Vf) (Max) @ If:1.2 V @ 100 mA
  • Speed:Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr):4 ns
  • Current - Reverse Leakage @ Vr:500 nA @ 80 V
  • Operating Temperature - Junction:125°C (Max)
  • Mounting Type:Surface Mount
  • Package / Case:SC-70, SOT-323
  • Supplier Device Package:MCP
  • Grade:-
  • Qualification:-

Diode Arrays datasheet and documents for DCG010-TL-E

DCG010-TL-E

Diode Arrays Overview

The DCG010-TL-E is a silicon epitaxial planar ultrahigh-speed switching diode manufactured by Sanyo Electric Co., Ltd. It features a cathode common configuration with two anodes and one shared cathode. The device supports a maximum repetitive reverse voltage of 58V and a continuous forward current of 300mA per element. Peak forward surge current reaches 1A for 1ms. Key electrical parameters include a maximum reverse recovery time of 4ns at specified test conditions, low interterminal capacitance of 0.3pF, and a junction temperature range from -55°C to +150°C.

Diode Arrays Feature Summary

  • Ultrahigh-speed switching capability with minimal reverse recovery time
  • Compact package design ideally suited for hybrid integrated circuits
  • Low interterminal capacitance for high-frequency performance

Diode Arrays Applications

  • Hybrid integrated circuit implementations
  • High-speed switching applications requiring fast response times
  • Circuits demanding low parasitic capacitance

Diode Arrays Procurement Notes

Verify the manufacturer origin, as this component was originally produced by Sanyo Electric Co., Ltd. Confirm that the specific ordering suffix corresponds to the tape and reel packaging format required for automated assembly processes. Ensure compatibility with existing thermal management designs given the small physical footprint.

Diode Arrays Selection Notes

Select this component when designing circuits that require rapid switching speeds and minimal signal delay. The dual-anode single-cathode structure allows for efficient layout in compact hybrid modules. Consider the low capacitance specification for high-frequency signal integrity requirements where standard rectifiers may introduce excessive loading effects.

Diode Arrays Part Context

This device belongs to the category of silicon epitaxial planar switching diodes. It represents a specialized component designed for high-performance analog and digital switching environments. The technology focuses on minimizing charge storage effects to achieve superior transient response characteristics compared to standard rectifier diodes.

Diode Arrays Replacement Considerations

Consult official documentation for confirmed substitute part numbers. Verify pinout compatibility and electrical parameter margins before integrating alternative components into the design.

Diode Arrays FAQ

What is the internal configuration of the DCG010?

The DCG010 features a cathode common configuration containing two independent anodes sharing a single common cathode terminal.

What is the maximum operating junction temperature?

The maximum operating junction temperature for this device is +150°C.

How does the package size benefit circuit design?

The very small-sized package makes it ideally suited for use in hybrid integrated circuits where space constraints are critical.

DCG010-TL-EDCG010-TL-E
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