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DCG85X1200NA is listed in the Diode Arrays range at ChipApex. The manufacturer field lists IXYS. Its product description is DIODE MOD SIC 1200V 43A SOT227B. Review the specifications below when checking this part for your BOM.
The IXYS DCG85X1200NA is a dual independent silicon carbide (SiC) Schottky diode module designed for high-power applications. It features a 1200V blocking voltage and supports a maximum continuous load current of 82A, with each independent leg rated at 41A. The device utilizes a SOT-227B (miniBLOC) chassis mount package with screw electrical mounting. Key electrical parameters include a maximum forward voltage of 2.2V and a peak forward impulse current capability of 1.15kA.
Verify the specific suffix and marking on the component to ensure it matches the DCG85X1200NA designation exactly. Confirm that the SOT-227B package dimensions align with your chassis mounting requirements. Check for RoHS compliance status if required by your manufacturing standards. Ensure the supplier provides valid traceability documentation for this semiconductor component.
Select this component when high reverse voltage blocking and low forward conduction loss are critical. The dual independent structure allows for flexible circuit topologies requiring isolated or parallel rectification paths. Consider the thermal management capabilities of the miniBLOC package for high-current density applications where efficient heat dissipation is necessary for reliable long-term operation.
This part belongs to IXYS's range of high-power discrete modules and arrays. It complements other SiC and silicon-based rectifiers in industrial power conversion systems. The miniBLOC form factor is standard for medium-to-high current chassis-mounted applications, offering a balance between current capacity and physical footprint compared to larger press-pack devices.
Public confirmed substitute part numbers are not available in the provided source data.
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