DD400S33K2CB3NDSA1

Description：DIODE MOD GP 3300V 400A AIHV1303
Series：-

SKU:a279369c136f Category: Diode Arrays Brand: Infineon Technologies

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Product introduction

DD400S33K2CB3NDSA1 is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is DIODE MOD GP 3300V 400A AIHV1303. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for DD400S33K2CB3NDSA1

Description：DIODE MOD GP 3300V 400A AIHV1303
Series：-
Mfr：Infineon Technologies
Package：Tray
Diode Configuration：2 Independent
Technology：Standard
Voltage - DC Reverse (Vr) (Max)：3300 V
Current - Average Rectified (Io) (per Diode)：400A (DC)
Voltage - Forward (Vf) (Max) @ If：3.5 V @ 400 A
Speed：Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr)：-
Current - Reverse Leakage @ Vr：-
Operating Temperature - Junction：-40°C ~ 125°C
Mounting Type：Chassis Mount
Package / Case：Module
Supplier Device Package：A-IHV130-3
Grade：-
Qualification：-

Diode Arrays datasheet and documents for DD400S33K2CB3NDSA1

DD400S33K2CB3NDSA1

Diode Arrays Overview

The DD400S33K2CB3NDSA1 is a high-power inverter diode module rated for a repetitive peak reverse voltage of 3300 V and a continuous DC forward current of 400 A. It features a maximum power dissipation of 800 kW at a junction temperature of 125°C, with a forward voltage ranging from 2.80 V to 3.50 V depending on thermal conditions. The module utilizes an AlSiC baseplate and AlN internal insulation, providing an isolation test voltage of 6.0 kV and a partial discharge extinction voltage of 2.6 kV.

Diode Arrays Feature Summary

Utilizes an AlSiC baseplate material for enhanced thermal management and mechanical stability under high power cycling.
Incorporates AlN (Aluminum Nitride) internal insulation to provide basic electrical isolation compliant with safety class standards.
Features low stray inductance design with a specified module stray inductance of 25 nH to minimize switching transients.

Diode Arrays Applications

High-voltage industrial traction systems
Medium voltage motor drives
Industrial power conversion equipment

Diode Arrays Procurement Notes

Verify the specific ordering suffix against official Infineon documentation to confirm exact manufacturing revisions and compliance certifications. Ensure that dynamic performance data requirements are met by pairing this diode module with the recommended FF400R33KF2C IGBT module as specified in the technical datasheet.

Diode Arrays Selection Notes

Select this component for applications requiring robust high-voltage blocking capabilities and high current handling. Consider the thermal resistance characteristics and mounting torque specifications during system design to ensure reliable operation within the -40°C to +125°C junction temperature range.

Diode Arrays Part Context

This part belongs to the Infineon IGBT module family, specifically designed as a complementary inverter diode for high-power semiconductor assemblies. It is engineered to work in conjunction with matching IGBT switches to form complete phase legs for demanding power electronics applications.