Diode Arrays DD600S65K3NOSA1 product image

DD600S65K3NOSA1

$1,294.51
  • Description:DIODE MODULE GP 6500V AIHV130-6
  • Series:-

SKU:5c6ae836d494 Category: Brand:

  
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DD600S65K3NOSA1 is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is DIODE MODULE GP 6500V AIHV130-6. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for DD600S65K3NOSA1

  • Description:DIODE MODULE GP 6500V AIHV130-6
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tray
  • Diode Configuration:2 Independent
  • Technology:Standard
  • Voltage - DC Reverse (Vr) (Max):6500 V
  • Current - Average Rectified (Io) (per Diode):-
  • Voltage - Forward (Vf) (Max) @ If:3.5 V @ 600 A
  • Speed:Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):-
  • Current - Reverse Leakage @ Vr:-
  • Operating Temperature - Junction:-50°C ~ 125°C
  • Mounting Type:Chassis Mount
  • Package / Case:Module
  • Supplier Device Package:A-IHV130-6
  • Grade:-
  • Qualification:-

Diode Arrays datasheet and documents for DD600S65K3NOSA1

DD600S65K3NOSA1

Diode Arrays Overview

The DD600S65K3NOSA1 is a high-power IGBT module manufactured by Infineon Technologies, designed for demanding industrial and traction applications. It features a dual configuration with a maximum collector-emitter voltage of 6500 V and a continuous collector current rating of 600 A at 25°C. The module utilizes silicon technology and offers a power dissipation capacity of 1 MW. It operates within a temperature range from -50°C to +125°C and is supplied in tray packaging.

Diode Arrays Feature Summary

  • High-voltage capability suitable for heavy-duty industrial environments
  • Robust thermal performance with significant power dissipation capacity
  • Dual configuration for versatile circuit integration

Diode Arrays Applications

  • Industrial motor drives
  • Traction systems
  • High-power inverters

Diode Arrays Procurement Notes

Verify the exact part number suffix against official Infineon documentation to ensure functional equivalence, as ordering codes may vary. Confirm availability through authorized distributors, noting that lead times and stock levels fluctuate. Cross-reference the datasheet revision date to ensure compliance with current technical specifications before procurement.

Diode Arrays Selection Notes

Select this component for applications requiring high voltage isolation and substantial current handling capabilities. Ensure the cooling system design accommodates the specified power dissipation limits. Verify that the operating junction temperature remains within the defined range to maintain reliability and performance standards over the product lifecycle.

Diode Arrays Part Context

This module belongs to Infineon's portfolio of high-voltage IGBT modules tailored for robust power conversion needs. It represents a solution for sectors where electrical stress and thermal management are critical constraints. The design supports efficient energy transfer in systems requiring durable semiconductor switching components.

Diode Arrays Replacement Considerations

Consult official Infineon substitution guides for verified alternatives. Do not assume compatibility with other series without checking pinout and electrical parameter alignment.

Diode Arrays FAQ

What is the maximum collector-emitter voltage rating?

The maximum collector-emitter voltage (VCEO) is rated at 6500 V.

Is this module suitable for traction applications?

Yes, the module is certified for industrial and traction quality grades.

DD600S65K3NOSA1DD600S65K3NOSA1
$1,294.51
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