DD800S17K3_B2

Description：DIODE MODULE GEN PURP 1700V
Series：-

SKU:b96a7bbb3303 Category: Diode Arrays Brand: Infineon Technologies

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Product introduction

DD800S17K3_B2 is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is DIODE MODULE GEN PURP 1700V. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for DD800S17K3_B2

Description：DIODE MODULE GEN PURP 1700V
Series：-
Mfr：Infineon Technologies
Package：Bulk
Diode Configuration：2 Independent
Technology：Standard
Voltage - DC Reverse (Vr) (Max)：1700 V
Current - Average Rectified (Io) (per Diode)：-
Voltage - Forward (Vf) (Max) @ If：2.2 V @ 800 A
Speed：Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr)：-
Current - Reverse Leakage @ Vr：-
Operating Temperature - Junction：-40°C ~ 125°C
Mounting Type：Chassis Mount
Package / Case：Module
Supplier Device Package：-
Grade：-
Qualification：-

Diode Arrays datasheet and documents for DD800S17K3_B2

DD800S17K3_B2

Diode Arrays Overview

The DD800S17K3_B2 is a single inverter diode module rated for a repetitive peak reverse voltage of 1700 V and a continuous DC forward current of 800 A. It features an AlSiC baseplate with basic insulation using AlN. The module provides a creepage distance of 32.2 mm and a clearance of 19.1 mm, with a comparative tracking index exceeding 400. Operating temperature ranges from -40 °C to +125 °C. Key electrical parameters include a maximum forward voltage of 2.20 V at 800 A and 125 °C, and a peak reverse recovery current of 850 A under specified switching conditions.

Diode Arrays Feature Summary

Utilizes an AlSiC baseplate material for optimized thermal management and mechanical robustness.
Features internal basic insulation utilizing Aluminum Nitride (AlN) dielectric layers.
Designed for high power cycling capability within the Diodes IGBT EC4 Module series.

Diode Arrays Applications

Industrial motor drives
Medium voltage drive systems
Traction inverters

Diode Arrays Procurement Notes

Verify component authenticity through official Infineon channels or authorized distributors. Confirm that the specific ordering suffix matches project requirements. Review the latest application notes for correct mounting torque specifications and thermal interface material selection. Ensure compliance with RoHS directives and functional safety standards relevant to the target deployment environment.

Diode Arrays Selection Notes

Select this component when designing circuits requiring high-voltage rectification with substantial current handling capabilities. The AlSiC baseplate offers superior thermal conductivity compared to traditional copper substrates. Verify compatibility with existing gate driver topologies and ensure adequate heatsinking infrastructure supports the specified thermal resistance values.

Diode Arrays Part Context

This component belongs to the Diodes IGBT EC4 Module series manufactured by Infineon Technologies. It serves as a complementary device to IGBT switches in power conversion architectures. The module is engineered for industrial applications demanding high reliability and compact form factors.