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DD800S45KL3B5NPSA1 is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is DIODE MOD GP 4500V 800A MOD. Review the specifications below when checking this part for your BOM.
The DD800S45KL3_B5 is a highly insulated IGBT module featuring an AlSiC base plate and enhanced insulation of 10.4 kV AC for 60 seconds. It provides a repetitive peak reverse voltage (VRRM) of 4500 V, a continuous DC forward current (IF) of 800 A, and a repetitive peak forward current (IFRM) of 1600 A. The module includes internal basic insulation using AlN with creepage distances up to 64.0 mm and clearance distances up to 40.0 mm. It operates within a junction temperature range of -50 °C to 125 °C.
Verify the specific ordering suffix against official Infineon documentation to ensure correct configuration. Confirm that the component meets all relevant industrial qualification standards, including IEC 60747, 60749, and 60068. Ensure mounting torque specifications are strictly followed during installation to maintain electrical integrity and thermal performance.
Select this module for applications requiring high voltage isolation and robust thermal management in demanding environments. The AlSiC base plate offers superior thermal cycling capability compared to standard materials. Verify that the system design accommodates the required creepage and clearance distances for the intended operating voltage and pollution degree.
This component belongs to Infineon's portfolio of highly insulated power modules designed for industrial and traction applications. It integrates advanced packaging technologies to support high-power density designs while maintaining strict safety isolation requirements. The module is engineered to withstand harsh operational conditions typical of renewable energy and heavy-duty transportation systems.
Public confirmed substitute part numbers: None available.
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