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DG412HSDJ-E3
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Product Detailed Parameters
- Description：IC SWITCH SPST-NOX4 35OHM 16DIP
- Series：-
- Mfr：Vishay Siliconix
- Package：Tube
- Switch Circuit：SPST - NO
- Multiplexer/Demultiplexer Circuit：1:01
- On-State Resistance (Max)：35Ohm
- Channel-to-Channel Matching (ΔRon)：-
- Voltage - Supply, Single (V+)：13V ~ 44V
- Voltage - Supply, Dual (V±)：±5V ~ 20V
- Switch Time (Ton, Toff) (Max)：105ns, 80ns
- -3db Bandwidth：-
- Charge Injection：22pC
- Channel Capacitance (CS(off), CD(off))：12pF, 12pF
- Current - Leakage (IS(off)) (Max)：250pA
- Crosstalk：-88dB @ 1MHz
- Operating Temperature：-40°C ~ 85°C (TA)
- Mounting Type：Through Hole
- Package / Case：16-DIP (0.300", 7.62mm)
- Supplier Device Package：16-PDIP
- Number of Circuits：4
- Grade：-
- Qualification：-
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Overview
The DG412HSDJ-E3 is a precision monolithic quad SPST CMOS analog switch manufactured by Vishay Siliconix. It features a maximum supply voltage rating of 44 V and supports an analog signal range of ±15 V. The device provides a typical on-resistance (RDS(on)) of 25 Ω, with a maximum of 35 Ω at room temperature. Switching performance includes a turn-on time (tON) of 68 ns and a turn-off time (tOFF) of 42 ns. Power dissipation is rated at 470 mW in the 16-pin plastic DIP package. The component operates within a temperature range of -40 °C to +85 °C.
Feature Summary
- High-voltage capability with a 44 V supply rating and ±15 V analog signal range
- Fast switching speeds suitable for high-speed data acquisition applications
- Ultra-low power consumption of 0.35 µW ideal for battery-powered systems
- TTL and CMOS logic compatible for simple interfacing
Applications
- Precision automatic test equipment
- Precision data acquisition systems
- Communication systems
- Battery powered systems
- Computer peripherals
Procurement Notes
Verify the specific suffix 'E3' confirms lead-free status and RoHS compliance as per Vishay standards. Confirm the 'DJ' suffix corresponds to the 16-pin Plastic DIP package variant. Ensure the operating environment remains within the specified -40 °C to +85 °C temperature range to maintain guaranteed electrical parameters.
Selection Notes
Select this part when high voltage isolation and fast switching are required simultaneously. The DG412 series utilizes opposite control logic compared to the DG411 series; verify truth table compatibility with the system controller. Consider the 470 mW power dissipation limit and apply appropriate derating factors if ambient temperatures exceed 25 °C.
Part Context
This component belongs to the DG411HS/DG412HS/DG413HS family designed for high-speed, low-error switching of precision analog signals. The DG412 variant specifically responds to opposite control logic relative to the DG411. The device is built on a high-voltage silicon gate process with an epitaxial layer to prevent latchup.
Replacement Considerations
DG411HSDJ-E3: Requires logic inversion due to opposite control truth table. DG413HSDJ-E3: Contains mixed normally open/closed switches rather than four identical SPST switches.
