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DG419DY-T1 is listed in the Analog Switches, Multiplexers, Demultiplexers range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is IC SWITCH SPDT X 1 35OHM 8SOIC. Review the specifications below when checking this part for your BOM.
The DG419DY-T1-E3 is a precision CMOS analog switch manufactured by Vishay Siliconix, housed in an 8-lead narrow SOIC package. It features a single SPDT configuration with a maximum on-resistance of 35 Ohms and a supply voltage range from 13 V to 44 V. The device supports dual supplies between -15 V and +15 V, operates within a temperature range of -40 °C to +85 °C, and exhibits a maximum turn-on time of 175 ns. Power dissipation is rated at 400 mW, with a maximum supply current of 1 uA.
Verify the complete part number including the suffix '-E3' to confirm RoHS compliance status. Ensure the ordering suffix matches the required tape and reel packaging format for automated assembly processes. Cross-reference the manufacturer's latest documentation to validate any revisions to the pinout or electrical specifications before finalizing procurement orders.
Select this component when a single-pole double-throw (SPDT) topology is required for analog signal routing. The narrow SOIC package is appropriate for applications demanding high board space efficiency. Verify that the maximum supply voltage and on-resistance limits align with the specific circuit requirements and operating temperature conditions.
This device belongs to the DG417 series of monolithic CMOS analog switches. It shares the same physical package and general performance characteristics as the DG417 and DG418 models, differing primarily in its internal SPDT configuration compared to the SPST configurations of the other variants in the family.
DG419DY-E3
The DG419 guarantees break-before-make switching action, which prevents the simultaneous connection of both common terminals during state transitions.
Signals on the source or drain pins exceeding the positive or negative supply levels are clamped by internal diodes, requiring the forward diode current to be limited to the maximum ratings.
No, an epitaxial layer is included in the construction to prevent latch-up under normal operating conditions.
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