DG636EEQ-T1-GE4

Overview

The DG636EEQ-T1-GE4 is a dual SPDT CMOS analog switch manufactured by Vishay Siliconix. It operates from +3 V to +16 V single supplies or ±3 V to ±8 V dual supplies. The device features ultra-low charge injection of less than ±0.3 pC typical and leakage currents of 13 pA typical at 25 °C. On-resistance is typically 63 Ω with low parasitic capacitance. It includes break-before-make switching action and is controlled via A0, A1, and EN logic inputs. The component is housed in a 14-pin TSSOP package and supports an operating temperature range from -40 °C to +125 °C.

Feature Summary

• Ultra-low charge injection for precision signal integrity
• Low leakage current characteristics
• Break-before-make switching action

Applications

• Data acquisition systems
• Medical instruments
• Precision instruments
• Communications systems
• Automated test equipment
• Sample and hold circuits
• Relay replacement

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm the package type and temperature rating. Ensure compatibility with required supply voltages and control logic levels before integration. Confirm RoHS compliance status through manufacturer resources if environmental regulations apply to the design.

Selection Notes

Select this component when low charge injection and minimal leakage are critical for maintaining signal accuracy in analog front ends. Verify that the 14-pin TSSOP footprint fits the board layout constraints. Ensure the application voltage stays within the specified single or dual supply limits to maintain guaranteed performance parameters.

Part Context

This part belongs to the DG636E family of dual SPDT analog switches. It shares functional similarities with other devices in the series but differs in packaging and specific electrical tolerances. The EEQ suffix specifically denotes the 14-pin TSSOP package variant available in tape and reel format.

Replacement Considerations

DG636EEN-T1-GE4 (miniQFN-16 package)