DGSK20-018A

Diode Arrays Overview

The DGSK20-018A is a Gallium Arsenide Schottky Rectifier manufactured by IXYS. It features a common cathode configuration with an average forward current rating of 15 A at 25°C and a repetitive peak reverse voltage of 180 V. The device exhibits a typical junction capacitance of 22 pF, ensuring minimal charge storage effects. Maximum ratings include a junction temperature range from -55°C to +175°C and a total power dissipation of 4 W at 25°C case temperature.

Diode Arrays Feature Summary

• Utilizes Gallium Arsenide material for very high switching speed and low junction capacity.
• Features soft turn-off characteristics that minimize reverse current peaks during switching transitions.
• Demonstrates temperature-independent switching behavior across the specified operating range.
• Constructed with epoxy resin that meets UL 94V-0 flammability standards.

Diode Arrays Applications

• MHz switched mode power supplies (SMPs)
• High frequency converters
• Resonant converters

Diode Arrays Procurement Notes

Verify the specific package variant required, as the datasheet covers both single diode (DGS) and common cathode dual (DGSK) configurations in TO-220 and TO-263 AB packages. Confirm thermal management requirements against the 4 W dissipation limit at 25°C case temperature. Ensure mounting torque specifications are adhered to for versions utilizing the central pin. Cross-reference ordering suffixes to confirm exact terminal arrangements and physical dimensions before finalizing procurement.

Diode Arrays Selection Notes

Select this component for applications requiring fast recovery and low reverse leakage current where standard silicon rectifiers may exhibit excessive reverse recovery charge. The GaAs construction offers superior performance in high-frequency environments compared to conventional silicon devices. Consider the thermal resistance values when designing heat sinking solutions for continuous operation above 25°C ambient temperatures.

Diode Arrays Part Context

This component belongs to the DGS/DGSK series of Gallium Arsenide Schottky Rectifiers produced by IXYS. The series is designed to address the limitations of silicon diodes in high-speed switching applications by leveraging the material properties of Gallium Arsenide. These devices are part of IXYS's portfolio aimed at improving efficiency in power conversion systems through reduced switching losses.

Diode Arrays Replacement Considerations

Direct substitutes within the same family include the DGS10-018A for single diode applications or other variants in the DGS/DGSK series sharing the 180V rating. Verify pinout compatibility and thermal resistance parameters when replacing with components from different manufacturers.

Diode Arrays FAQ

What is the typical junction capacitance of the DGSK20-018A?

The typical junction capacitance is 22 pF at a reverse voltage of 100 V and a junction temperature of 125°C.

How does the turn-off behavior of this GaAs Schottky diode differ from standard rectifiers?

It features soft turn-off characteristics with no turn-on overvoltage peak, unlike standard rectifiers which suffer from delayed saturation and reverse recovery issues caused by minority carrier extraction.

What is the maximum non-repetitive surge forward current?

The maximum surge forward current (IFSM) is 20 A under conditions of TVJ = 45°C and a pulse width of 10 ms at 50 Hz sine wave.