RF Diode DME2858-000 product image

DME2858-000

$7.99
  • Description:RF DIODE SCHOTTKY 75MW
  • Series:DME

SKU:e2cd96c60f1e Category: Brand:

  
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DME2858-000 is listed in the RF Diode range at ChipApex. The manufacturer field lists Skyworks Solutions Inc.. Its product description is RF DIODE SCHOTTKY 75MW. Review the specifications below when checking this part for your BOM.

RF Diode specifications for DME2858-000

  • Description:RF DIODE SCHOTTKY 75MW
  • Series:DME
  • Mfr:Skyworks Solutions Inc.
  • Package:Tray
  • Diode Type:Schottky - Ring
  • Voltage - Peak Reverse (Max):-
  • Current - Max:100 mA
  • Capacitance @ Vr, F:-
  • Resistance @ If, F:-
  • Power Dissipation (Max):75 mW
  • Operating Temperature:-65°C ~ 175°C (TA)
  • Package / Case:4-SMD, Flat Leads
  • Supplier Device Package:-
  • Grade:-
  • Qualification:-

RF Diode datasheet and documents for DME2858-000

DME2858-000

RF Diode Overview

The DME2858-000 is a beam-lead silicon Schottky mixer diode from the Skyworks DME series, designed for X-band applications. It features a ring quad configuration with four junctions. Key electrical specifications include a capacitance range of 0.15 to 0.30 pF at 0 V and 1 MHz, and a series resistance of 8 Ω measured at 5 mA. The device operates within a medium drive level, characterized by a forward voltage of 325 to 425 mV at 1 mA and a barrier voltage of 3 V at 10 μA. Absolute maximum ratings specify a continuous wave power dissipation of 75 mW per junction and a maximum current of 100 mA. The component supports an operating temperature range from -65°C to +175°C.

RF Diode Feature Summary

  • Beam-lead design facilitates bonding to small low-capacitance junction areas
  • Statistical Process Control wafer fabrication ensures uniformity
  • Low intermodulation distortion characteristics
  • Halogen-free construction compliant with applicable legislation

RF Diode Applications

  • Microwave Integrated Circuits (MICs)
  • Balanced mixers
  • Modulators
  • High-speed switches

RF Diode Procurement Notes

Verify the specific ordering suffix and package outline drawing number against the manufacturer's datasheet before procurement. Confirm that the intended application environment remains within the specified absolute maximum ratings for current and power dissipation. Ensure proper electrostatic discharge precautions are implemented during handling and installation to prevent device damage.

RF Diode Selection Notes

Select this part for X-band frequency ranges between 8.2 GHz and 12.4 GHz. The medium drive level specification suits applications requiring moderate local oscillator power. Verify compatibility with the required impedance control and ensure the circuit design accommodates the beam-lead mounting style and associated thermal management requirements.

RF Diode Part Context

This component belongs to the DME, DMF, and DMJ series of silicon beam-lead Schottky mixer diodes manufactured by Skyworks Solutions Inc. The series covers S, C, X, Ku, K, and Ka bands. The DME variant specifically denotes a medium drive level device available in singles, pairs, common cathode, anti-parallel, ring quad, and bridge quad configurations.

RF Diode Replacement Considerations

Compatible substitutes within the same series include DME2857-000 for S/C band applications and DME2859-000 for Ku band applications. Other series members such as DMF or DMJ variants offer different drive levels but share similar beam-lead packaging.

DME2858-000DME2858-000
$7.99
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