DMJ2833-000

RF Diode Overview

The DMJ2833-000 is a beam-lead silicon Schottky barrier mixer diode configured as a series pair. Designed for K and Ka bands (26.5 to 40.0 GHz), it features high drive characteristics with a maximum junction capacitance of 0.1 pF at 0 V, 1 MHz. The device exhibits a series resistance of 18 Ω at 5 mA, a breakdown voltage of 4 V at 10 μA, and a forward voltage ranging from 600 to 700 mV at 1 mA. It operates within an ambient temperature range of -65°C to +175°C and can dissipate up to 75 mW per junction continuously.

RF Diode Feature Summary

• Beam-lead design reduces bonding challenges associated with low capacitance junctions
• Statistical process control wafer fabrication ensures uniformity and close impedance control
• Low parasitics and low intermodulation distortion suitable for balanced mixers

RF Diode Applications

• Microwave Integrated Circuits (MICs)
• Mixers
• Detectors

RF Diode Procurement Notes

Verify the current production status before initiating procurement. This component has been identified as End-of-Life (EOL) by Skyworks Solutions, Inc., with discontinuation notifications issued. Sourcing may be restricted to surplus or secondary market channels only. Confirm RoHS compliance details directly with authorized distributors or legacy stock holders prior to finalizing any acquisition plans.

RF Diode Selection Notes

Select this part when designing circuits for K-band or Ka-band applications requiring high local oscillator drive levels. The specific electrical parameters, including the 0.1 pF maximum capacitance and 18 Ω series resistance, are optimized for these frequency ranges. Ensure the system accommodates the required 600 to 700 mV forward voltage drop at 1 mA for proper biasing and performance matching.

RF Diode Part Context

This component belongs to the DME, DMF, and DMJ series of silicon beam-lead Schottky mixer diodes manufactured by Skyworks Solutions, Inc. The series encompasses singles, pairs, common cathodes, anti-parallel pairs, and quads across various frequency bands. The DMJ suffix specifically denotes high-drive devices intended for applications demanding higher local oscillator power.

RF Diode Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Due to the End-of-Life status, direct replacements must be evaluated based on identical package dimensions (Outline Drawing 504-012), electrical specifications, and mounting requirements.