DPG60C200HB

Diode Arrays Overview

The IXYS DPG60C200HB is a HiPerFRED2 series switching diode in a TO-247AD-3 package. It features a common cathode dual configuration with a 200 V peak reverse voltage and 30 A forward current per diode. The device supports a 360 A surge current, 160 W power dissipation, and 35 ns recovery time. Forward voltage is 1.63 V at 30 A, with 1 uA reverse leakage. Operating temperature ranges from -55 C to +175 C.

Diode Arrays Feature Summary

• HiPerFRED2 technology for high-speed switching performance
• Common cathode dual diode configuration
• High thermal stability up to 175 C junction temperature

Diode Arrays Applications

• High-frequency power conversion circuits
• Free-wheeling rectification in motor drives
• DC-DC converter output stages

Diode Arrays Procurement Notes

Verify the specific suffix HB against the manufacturer datasheet to confirm pinout and thermal characteristics. Ensure the TO-247AD-3 mounting style matches the heatsink interface. Confirm RoHS compliance status through official documentation before integration into regulated assemblies.

Diode Arrays Selection Notes

Select this component for applications requiring fast recovery times and high current handling in a through-hole format. Compare the 35 ns reverse recovery time against circuit switching frequencies. Evaluate the 1.63 V forward voltage drop for thermal management requirements within the 160 W dissipation limit.

Diode Arrays Part Context

This part belongs to the IXYS HiPerFRED2 family of fast recovery diodes. It utilizes advanced silicon planar technology to achieve low reverse recovery charge. The TO-247AD-3 package provides robust mechanical mounting and efficient heat transfer for high-power industrial applications.

Diode Arrays Replacement Considerations

Cross-reference with DPG60C200HJ or DPF60C200HJ for similar specifications. Verify package compatibility and electrical parameters such as reverse recovery time and forward voltage before substitution.