Diode Arrays DSEE6-06CC product image

DSEE6-06CC

  • Description:DIODE ARR GP 600V 6A ISOPLUS220
  • Series:HiPerDynFRED™

SKU:a4b36759fdde Category: Brand:

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DSEE6-06CC is listed in the Diode Arrays range at ChipApex. The manufacturer field lists IXYS. Its product description is DIODE ARR GP 600V 6A ISOPLUS220. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for DSEE6-06CC

  • Description:DIODE ARR GP 600V 6A ISOPLUS220
  • Series:HiPerDynFRED™
  • Mfr:IXYS
  • Package:Tube
  • Diode Configuration:1 Pair Series Connection
  • Technology:Standard
  • Voltage - DC Reverse (Vr) (Max):600 V
  • Current - Average Rectified (Io) (per Diode):6A
  • Voltage - Forward (Vf) (Max) @ If:1.8 V @ 10 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):20 ns
  • Current - Reverse Leakage @ Vr:25 µA @ 600 V
  • Operating Temperature - Junction:-40°C ~ 175°C
  • Mounting Type:Through Hole
  • Package / Case:ISOPLUS220™
  • Supplier Device Package:ISOPLUS220™
  • Grade:-
  • Qualification:-

Diode Arrays datasheet and documents for DSEE6-06CC

DSEE6-06CC

Diode Arrays Overview

The IXYS DSEE6-06CC is a HiPerDynFRED Epitaxial Diode housed in an ISOPLUS220 package with an electrically isolated back surface. It features a maximum repetitive reverse voltage (VRRM) of 600 V and a continuous forward current (IFAV) of 6 A at 150°C case temperature. The device exhibits a very short reverse recovery time (trr) of 20 ns and low peak reverse recovery current (IRM). Key electrical parameters include a maximum RMS current of 20 A, isolation voltage of 2500 V RMS, and junction temperature range from -40°C to +175°C.

Diode Arrays Feature Summary

  • Silicon chip mounted on Direct-Copper-Bond substrate for high power dissipation
  • Electrically isolated mounting surface providing 2500 V isolation
  • Soft reverse recovery behavior designed to minimize electromagnetic interference
  • Planar passivated chips ensuring robust performance

Diode Arrays Applications

  • Antiparallel diode for high frequency switching devices
  • Free wheeling diode in converters and motor control circuits
  • Rectifiers in switch mode power supplies (SMPS)
  • Snubber diode applications
  • Inductive heating systems

Diode Arrays Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm lot traceability and datasheet revision status prior to integration. Note that this specific part number is designated as not for new design; ensure compatibility with existing schematics before procurement.

Diode Arrays Selection Notes

Select this component for applications requiring fast recovery characteristics combined with galvanic isolation. The ISOPLUS220 package facilitates efficient thermal management via the isolated tab. Ensure the operating junction temperature remains within the specified -40°C to +175°C range for reliable operation under varying load conditions.

Diode Arrays Part Context

This component belongs to the HiPerDynFRED series, characterized by epitaxial diode technology optimized for high-speed switching. The ISOPLUS220 packaging provides a standardized form factor for industrial power electronics, balancing electrical isolation requirements with thermal performance constraints in compact designs.

Diode Arrays Replacement Considerations

The DSEE8-08CC is listed as a recommended replacement. Verify pinout compatibility and electrical parameter alignment before substitution.

Diode Arrays FAQ

What is the electrical isolation voltage of the DSEE6-06CC?

The device provides an isolation voltage of 2500 V RMS at 50/60 Hz.

How are the pins configured in the ISOPLUS220 package?

Pin 1 is Cathode, Pin 2 is Anode/Cathode, and Pin 3 is Anode. Pin 4 is the bottom heatsink which is electrically isolated from Pins 1, 2, and 3.

What is the typical reverse recovery time for this diode?

The typical reverse recovery time (trr) is 20 ns under specified test conditions.

DSEE6-06CCDSEE6-06CC

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