Gate Driver E-L6385D013TR product image

E-L6385D013TR

$2.18
  • Description:IC GATE DRVR HALF-BRIDGE 8SO
  • Series:-
  • Mfr:STMicroelectronics
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:32f535ffcf43 Category: Brand:

  
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E-L6385D013TR is listed in the Gate Driver range at ChipApex. The manufacturer field lists STMicroelectronics. Its product description is IC GATE DRVR HALF-BRIDGE 8SO. Review the specifications below when checking this part for your BOM.

Gate Driver specifications for E-L6385D013TR

  • Description:IC GATE DRVR HALF-BRIDGE 8SO
  • Series:-
  • Mfr:STMicroelectronics
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Driven Configuration:Half-Bridge
  • Channel Type:Independent
  • Number of Drivers:2
  • Gate Type:IGBT, MOSFET (N-Channel)
  • Voltage - Supply:17V (Max)
  • Logic Voltage - VIL, VIH:1.5V, 3.6V
  • Current - Peak Output (Source, Sink):400mA, 650mA
  • Input Type:Inverting
  • Rise / Fall Time (Typ):50ns, 30ns
  • Operating Temperature:-40°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package:8-SOIC
  • Grade:-
  • Qualification:-
  • High Side Voltage - Max (Bootstrap):600 V

Gate Driver datasheet and documents for E-L6385D013TR

E-L6385D013TR

Gate Driver Overview

The E-L6385D013TR is a high-voltage half-bridge gate driver manufactured by STMicroelectronics using BCD offline technology. It drives N-channel power MOSFETs or IGBTs with a floating high-side section supporting up to 600 V rails. The device features two independent outputs capable of sourcing 400 mA and sinking 650 mA, with switching times of 50 ns rise and 30 ns fall under 1 nF load. Logic inputs are CMOS/TTL compatible, and it includes an internal bootstrap diode and undervoltage lockout for both sections.

Gate Driver Feature Summary

  • Supports high voltage rails up to 600 V with dV/dt immunity of ±50 V/nsec across the full temperature range
  • Integrates an internal bootstrap diode for compact and reliable circuit design
  • Provides undervoltage lockout protection on both lower and upper driving sections
  • Features CMOS/TTL Schmitt trigger inputs with hysteresis and pull-down resistors

Gate Driver Applications

  • Driving half-bridge configurations of power MOSFETs or IGBTs
  • Asymmetrical half-bridge drive applications requiring simultaneous high output states
  • High voltage power management systems utilizing BCD technology

Gate Driver Procurement Notes

Verify component status as this part number is listed as obsolete in distributor records. Confirm availability of alternative packaging or updated series equivalents such as L6385ED013TR if production continuity is required. Ensure compatibility with existing PCB footprints and thermal requirements when substituting.

Gate Driver Selection Notes

Select this driver for applications requiring robust high-side floating operation up to 600 V. The integrated bootstrap diode simplifies external component count. Ensure input logic levels match CMOS or TTL standards. Verify that peak current demands do not exceed the 650 mA sink and 400 mA source capabilities under thermal constraints.

Gate Driver Part Context

This component belongs to the L6385E series of high-voltage gate drivers from STMicroelectronics. It is designed for driving power switches in motor control and power supply applications. The series utilizes BCD technology to integrate high-voltage and low-voltage circuits on a single chip.

Gate Driver Replacement Considerations

  • L6385ED013TR
  • L6385ED

Gate Driver FAQ

Is the output phase inverted relative to the input?

No, the outputs toggle in phase with the inputs.

What is the maximum voltage rating for the high-side section?

The high-side (floating) section can work with voltage rails up to 600 V.

E-L6385D013TRE-L6385D013TR
$2.18
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