FDV303N-F169

Single FETs, MOSFETs Overview

The FDV303N-F169 is an N-channel enhancement mode MOSFET from the UniFET series by onsemi. It features a maximum drain-source voltage of 25 V and a continuous drain current of 680 mA. The device utilizes a SOT-23 surface-mount package with three pins. Key electrical parameters include a maximum drain-source on-resistance of 450 mΩ, a typical gate charge of 1.64 nC at specified conditions, and a power dissipation rating of 350 mW. It operates within a temperature range of -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

• N-channel enhancement mode construction for efficient switching applications
• UniFET series integration providing optimized performance in small packages
• Surface-mount SOT-23 design suitable for space-constrained PCB layouts

Single FETs, MOSFETs Applications

• Low-side switching in portable electronic devices
• Load control in battery-powered systems
• General-purpose signal switching circuits

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix F169 against official onsemi documentation to confirm packaging details such as reel size or tape-and-reel specifications. Ensure the component matches the standard FDV303N electrical characteristics while confirming any unique handling or storage requirements associated with this specific ordering code variant.

Single FETs, MOSFETs Selection Notes

Select this component when a compact N-channel MOSFET is required for low-voltage, low-current switching tasks. The SOT-23 package offers a balance between thermal performance and board space efficiency. Consider the 450 mΩ on-resistance and 680 mA current limit to ensure adequate headroom for the intended load application without exceeding thermal constraints.

Single FETs, MOSFETs Part Context

The FDV303N belongs to onsemi's UniFET family, which focuses on delivering high-performance discrete MOSFETs in small form factors. This series is designed to meet the demands of modern consumer electronics and industrial applications where space savings and reliable switching are critical. The part represents a standard solution for general-purpose low-power switching needs.

Single FETs, MOSFETs Replacement Considerations

Consult official cross-reference guides for verified substitutes. Generic replacements must match the N-channel type, 25 V Vds, 680 mA Id, and SOT-23 package constraints.