Diode Arrays FEP16BTHE3/45 product image

FEP16BTHE3/45

  • Description:DIODE ARRAY GP 100V 16A TO-220-3
  • Series:-

SKU:4c8170ec693f Category: Brand:

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FEP16BTHE3/45 is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Vishay General Semiconductor - Diodes Division. Its product description is DIODE ARRAY GP 100V 16A TO-220-3. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for FEP16BTHE3/45

  • Description:DIODE ARRAY GP 100V 16A TO-220-3
  • Series:-
  • Mfr:Vishay General Semiconductor - Diodes Division
  • Package:Tube
  • Diode Configuration:1 Pair Common Cathode
  • Technology:Standard
  • Voltage - DC Reverse (Vr) (Max):100 V
  • Current - Average Rectified (Io) (per Diode):16A
  • Voltage - Forward (Vf) (Max) @ If:950 mV @ 8 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):35 ns
  • Current - Reverse Leakage @ Vr:10 µA @ 100 V
  • Operating Temperature - Junction:-55°C ~ 150°C
  • Mounting Type:Through Hole
  • Package / Case:TO-220-3
  • Supplier Device Package:TO-220-3
  • Grade:Automotive
  • Qualification:AEC-Q101

Diode Arrays datasheet and documents for FEP16BTHE3/45

FEP16BTHE3/45

Diode Arrays Overview

The Vishay FEP16BTHE3/45 is a single fast recovery rectifier diode designed for through-hole mounting in TO-220AB packages. It features a peak repetitive reverse voltage of 200 V and supports a continuous forward current of 16 A. The device exhibits a maximum forward voltage drop of 1.5 V at rated current and a typical reverse leakage current of 10 µA. Key dynamic parameters include a 50 ns maximum reverse recovery time and a 250 A non-repetitive peak forward surge current capability. Operating temperatures range from -65 °C to +150 °C junction temperature.

Diode Arrays Feature Summary

  • Fast recovery characteristics with 50 ns reverse recovery time for efficient switching applications
  • High thermal stability supporting operation up to 150 °C junction temperature
  • Robust surge handling with 250 A non-repetitive peak forward current capacity
  • Low leakage current of 10 µA ensuring minimal power loss in reverse bias

Diode Arrays Applications

  • High-frequency DC-DC converters
  • Free-wheeling rectification in motor drives
  • Isolated output rectification in switch-mode power supplies
  • Inductive load protection circuits

Diode Arrays Procurement Notes

Verify the specific suffix /45 against the manufacturer's latest datasheet to confirm packaging details, as tube quantities may vary by region or production batch. Ensure the TO-220AB footprint matches your PCB layout requirements. Cross-reference part numbers carefully, as minor suffix changes can indicate different voltage ratings or package variations within the same series.

Diode Arrays Selection Notes

Select this component when a 200 V blocking voltage and 16 A continuous current are required in a standard through-hole configuration. The 50 ns recovery time makes it suitable for frequencies higher than standard rectifiers but potentially lower than ultra-fast alternatives. Consider the 1.5 V forward voltage drop for thermal management calculations in high-current designs.

Diode Arrays Part Context

This part belongs to Vishay’s FEP series of fast recovery rectifiers, which are silicon planar p-n junction devices. The series is engineered for general-purpose high-speed rectification in industrial and consumer electronics. The FEP16BTHE3 variant specifically denotes the 200 V rating within the 16 A current class, utilizing lead-free (E3) compliant materials.

Diode Arrays Replacement Considerations

Direct substitutes include the FES16BTHE3/45 or FEP16B-E3/45 if pinout and electrical parameters match exactly. Verify that any replacement maintains the 200 V reverse voltage and 16 A current ratings. Check for equivalent recovery times to ensure circuit stability in high-frequency applications.

FEP16BTHE3/45FEP16BTHE3/45

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