Diode Arrays FEP30GP-E3/45 product image

FEP30GP-E3/45

$2.36
  • Description:DIODE ARRAY GP 400V 15A TO247AD
  • Series:-

SKU:6d3815e1d0a0 Category: Brand:

  
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FEP30GP-E3/45 is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Vishay General Semiconductor - Diodes Division. Its product description is DIODE ARRAY GP 400V 15A TO247AD. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for FEP30GP-E3/45

  • Description:DIODE ARRAY GP 400V 15A TO247AD
  • Series:-
  • Mfr:Vishay General Semiconductor - Diodes Division
  • Package:Tube
  • Diode Configuration:1 Pair Common Cathode
  • Technology:Standard
  • Voltage - DC Reverse (Vr) (Max):400 V
  • Current - Average Rectified (Io) (per Diode):15A
  • Voltage - Forward (Vf) (Max) @ If:1.3 V @ 15 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):50 ns
  • Current - Reverse Leakage @ Vr:10 µA @ 400 V
  • Operating Temperature - Junction:-55°C ~ 150°C
  • Mounting Type:Through Hole
  • Package / Case:TO-3P-3, SC-65-3
  • Supplier Device Package:TO-247AD (TO-3P)
  • Grade:-
  • Qualification:-

Diode Arrays datasheet and documents for FEP30GP-E3/45

FEP30GP-E3/45

Diode Arrays Overview

The FEP30GP-E3/45 is a silicon junction rectifier manufactured by Vishay General Semiconductor - Diodes Division. It features a common cathode configuration housed in a TO-247 package with three pins for through-hole mounting. The device supports a maximum repetitive peak reverse voltage of 600 V and an average forward current of 30 A. Key electrical characteristics include a maximum forward voltage of 1.5 V, a peak non-repetitive forward surge current of 300 A, and a peak reverse recovery time of 50 ns. The component operates within a junction temperature range of -55°C to 150°C.

Diode Arrays Feature Summary

  • Utilizes silicon junction technology for robust rectification performance.
  • Features a common cathode configuration suitable for bridge or full-wave applications.
  • Designed for high thermal stability with a wide operating temperature range.

Diode Arrays Applications

  • High-power DC power supply circuits
  • Industrial motor drive rectification
  • Battery charging systems

Diode Arrays Procurement Notes

Verify the specific suffix against official Vishay documentation to confirm pinout and packaging variations. Confirm RoHS compliance status as required by project specifications. Check for any product change notices regarding manufacturing location updates. Ensure the TO-247 footprint matches the target PCB design constraints before finalizing procurement orders.

Diode Arrays Selection Notes

Select this component when a 30 A current rating and 600 V blocking voltage are required in a TO-247 form factor. Consider the 50 ns reverse recovery time for switching frequency limitations. Evaluate thermal management requirements given the 300 A surge capability and 150°C maximum junction temperature limits for reliable long-term operation.

Diode Arrays Part Context

This part belongs to Vishay's general-purpose silicon rectifier lineup. It shares the TO-247 mechanical outline with other high-current devices in the series. The E3 suffix indicates lead-free termination compliant with international environmental standards. It serves as a standard discrete solution for medium-to-high power conversion tasks.

Diode Arrays Replacement Considerations

Vishay FEP30JP-E3/45

Diode Arrays FAQ

What is the peak reverse recovery time for this device?

The peak reverse recovery time is specified as 50 ns.

Is this diode available in a surface-mount package?

No, the FEP30GP-E3/45 is designed for through-hole installation using the TO-247 package.

What is the maximum surge current capability?

The device can withstand a peak non-repetitive forward surge current of 300 A.

FEP30GP-E3/45FEP30GP-E3/45
$2.36
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