Diode Arrays FEPB6DTHE3/81 product image

FEPB6DTHE3/81

  • Description:DIODE ARRAY GP 200V 6A TO263AB
  • Series:-

SKU:e4480f4fee04 Category: Brand:

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FEPB6DTHE3/81 is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Vishay General Semiconductor - Diodes Division. Its product description is DIODE ARRAY GP 200V 6A TO263AB. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for FEPB6DTHE3/81

  • Description:DIODE ARRAY GP 200V 6A TO263AB
  • Series:-
  • Mfr:Vishay General Semiconductor - Diodes Division
  • Package:Tape & Reel (TR)
  • Diode Configuration:1 Pair Common Cathode
  • Technology:Standard
  • Voltage - DC Reverse (Vr) (Max):200 V
  • Current - Average Rectified (Io) (per Diode):6A
  • Voltage - Forward (Vf) (Max) @ If:975 mV @ 3 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):35 ns
  • Current - Reverse Leakage @ Vr:5 µA @ 200 V
  • Operating Temperature - Junction:-55°C ~ 150°C
  • Mounting Type:Surface Mount
  • Package / Case:TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package:TO-263AB (D2PAK)
  • Grade:Automotive
  • Qualification:AEC-Q101

Diode Arrays datasheet and documents for FEPB6DTHE3/81

FEPB6DTHE3/81

Diode Arrays Overview

The FEPB6DTHE3/81 is a dual common-cathode ultrafast rectifier manufactured by Vishay General Semiconductor. It utilizes glass passivated chip junction technology to achieve an ultrafast recovery time of 35 ns and low switching losses. The device supports a maximum average forward rectified current of 6.0 A per diode and offers a maximum repetitive peak reverse voltage of 200 V. It features a high forward surge capability of 75 A and operates within a temperature range of -55 °C to +150 °C.

Diode Arrays Feature Summary

  • Glass passivated chip junction for enhanced reliability
  • Ultrafast recovery time with low switching losses
  • High forward surge capability
  • Low leakage current characteristics

Diode Arrays Applications

  • High frequency rectifier of switching mode power supplies
  • Inverters
  • Freewheeling diodes
  • DC-to-DC converters

Diode Arrays Procurement Notes

Verify the specific suffix configuration against the datasheet ordering information to ensure correct package type and delivery mode. Confirm that the HE3 designation aligns with required automotive or high-reliability standards, as it indicates AEC-Q101 qualification and compliance with JESD 201 class 2 whisker testing requirements distinct from standard consumer grades.

Diode Arrays Selection Notes

Select this component for applications requiring dual common-cathode configurations in high-frequency power conversion circuits. Ensure thermal management accommodates the specified junction-to-case thermal resistance. Validate that the 200 V reverse voltage rating exceeds the circuit's peak inverse voltage requirements under all operating conditions.

Diode Arrays Part Context

This part belongs to the FEP(F,B)6AT thru FEP(F,B)6DT series of dual ultrafast rectifiers. The TO-263AB package provides efficient heat dissipation suitable for surface mount assembly. The series covers various voltage ratings from 50 V to 200 V while maintaining consistent current handling capabilities across the family.

Diode Arrays Replacement Considerations

FEPB6DT-E3/81

Diode Arrays FAQ

What is the maximum repetitive peak reverse voltage for this component?

The maximum repetitive peak reverse voltage (VRRM) is 200 V.

Does this component meet automotive reliability standards?

Yes, the HE3 suffix indicates the component is AEC-Q101 qualified and meets JESD 201 class 2 whisker test requirements.

What is the typical reverse recovery time?

The maximum DC reverse current is 50 μA at TC = 100 °C, and the maximum reverse recovery time is 35 ns.

FEPB6DTHE3/81FEPB6DTHE3/81

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