FJL6920TU

Single Bipolar Transistors Overview

The FJL6920TU is an NPN silicon triple-diffused planar bipolar junction transistor manufactured by onsemi. It is designed for high-voltage, high-current applications within the TO-264-3 through-hole package. Key electrical specifications include a maximum collector-emitter voltage (VCEO) of 800 V and a collector-base voltage (VCBO) of 1.7 kV. The device supports a continuous collector current of 20 A with a power dissipation rating of 200 W. It features a collector-emitter saturation voltage of 3 V and a DC current gain (hFE) ranging from 55 to 85. The maximum operating temperature is +150°C, and the emitter-base voltage (VEBO) is rated at 6 V.

Single Bipolar Transistors Feature Summary

• High voltage capability with 800 V collector-emitter and 1.7 kV collector-base ratings
• High current handling with 20 A continuous collector current capacity
• Robust thermal performance supporting up to 200 W power dissipation
• Triple diffused planar silicon construction for reliability

Single Bipolar Transistors Applications

• High voltage switching circuits
• Industrial power control systems
• Motor drive applications

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix TU corresponds to the tube packaging configuration when sourcing. Confirm RoHS compliance status through official manufacturer documentation or material composition declarations prior to integration. Ensure the procurement channel provides valid traceability data consistent with onsemi quality standards. Cross-reference the datasheet revision date to ensure alignment with current manufacturing specifications.

Single Bipolar Transistors Selection Notes

Select this component for designs requiring high breakdown voltages exceeding 800 V in a through-hole format. Evaluate the thermal management requirements carefully due to the 200 W dissipation rating and TO-264-3 package constraints. Consider the hFE range of 55 to 85 for base drive circuit calculations. Verify that the application environment remains within the specified +150°C maximum junction temperature limit.

Single Bipolar Transistors Part Context

This part belongs to the FJL6920 series of high-voltage NPN transistors. It utilizes triple diffused planar technology to achieve superior ruggedness and high voltage blocking capabilities compared to standard planar structures. The TO-264-3 package provides a robust mechanical connection suitable for high-power industrial environments where through-hole mounting is preferred for mechanical stability.

Single Bipolar Transistors Replacement Considerations

Consult official onsemi substitution guides for verified equivalents. Generic replacements may not match the 1.7 kV VCBO rating or the specific TO-264-3 pinout. Verify thermal resistance characteristics and hFE distributions before swapping components in existing designs.