Diode Arrays FLLD261TA product image

FLLD261TA

  • Description:DIODE ARR GP 100V 250MA SOT23-3
  • Series:-

SKU:d5e30c6191a1 Category: Brand:

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FLLD261TA is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is DIODE ARR GP 100V 250MA SOT23-3. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for FLLD261TA

  • Description:DIODE ARR GP 100V 250MA SOT23-3
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Diode Configuration:1 Pair Series Connection
  • Technology:Standard
  • Voltage - DC Reverse (Vr) (Max):100 V
  • Current - Average Rectified (Io) (per Diode):250mA
  • Voltage - Forward (Vf) (Max) @ If:1.4 V @ 200 mA
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):400 ns
  • Current - Reverse Leakage @ Vr:5 nA @ 100 V
  • Operating Temperature - Junction:-55°C ~ 150°C
  • Mounting Type:Surface Mount
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:SOT-23-3
  • Grade:-
  • Qualification:-

Diode Arrays datasheet and documents for FLLD261TA

FLLD261TA

Diode Arrays Overview

The FLLD261TA is a silicon planar low leakage common anode diode pair housed in a SOT23 package. It features a repetitive peak reverse voltage of 100 V and an average rectified forward current rating of 250 mA. The device supports a non-repetitive peak forward current of 3.0 A for 1 μs pulses. Electrical characteristics include a maximum reverse current of 5 nA at 100 V, a reverse recovery time of 400 ns, and a forward voltage of 1.4 V at -200 mA. Operating and storage temperatures range from -55 to +150 °C.

Diode Arrays Feature Summary

  • Common anode configuration integrating two diodes within a single compact surface-mount package.

Diode Arrays Applications

  • Low leakage signal rectification circuits
  • High-speed switching applications requiring fast recovery characteristics

Diode Arrays Procurement Notes

Verify the component datasheet against the manufacturer's official documentation to confirm electrical ratings and pinout configurations. Ensure that the SOT23 package dimensions and thermal dissipation requirements align with the specific design constraints. Cross-reference the part marking details to validate authenticity and correct revision status before integration into production systems.

Diode Arrays Selection Notes

Select this component when a dual diode solution with common anode topology is required in a minimal footprint. The low leakage current specification makes it suitable for sensitive analog or high-impedance digital interfaces. Evaluate the 400 ns reverse recovery time against the circuit's switching frequency to ensure adequate performance without excessive power loss or signal distortion.

Diode Arrays Part Context

This component belongs to the FLLD series of silicon planar diodes manufactured by Diodes Incorporated. The series includes variants such as the FLLD258 and FLLD263, which share similar packaging and basic structural characteristics but may differ in specific electrical parameters. These devices are designed for general-purpose rectification and switching tasks in consumer and industrial electronics.

Diode Arrays Replacement Considerations

Consult the manufacturer's official substitution guide for verified equivalent parts. Do not assume functional compatibility based solely on package similarity; verify all critical electrical parameters including voltage ratings, current limits, and recovery times against the original specifications.

Diode Arrays FAQ

What is the typical forward overshoot voltage for the FLLD261TA?

The typical forward overshoot voltage is 0.9 V when tested with a forward current of 10 mA and a rise time of 5 ns ±20%.

How does temperature affect the reverse current of the FLLD261TA?

At 25°C, the reverse current is typically 5 nA at 100 V. At a junction temperature of 150°C, the reverse current increases to a maximum of 5 μA under the same voltage condition.

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