FQAF47P06

Description：MOSFET P-CH 60V 38A TO3PF
Series：QFET®
Mfr：onsemi
Package：Tube

SKU:75d14777601d Category: Single FETs, MOSFETs Brand: onsemi

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Product introduction

FQAF47P06 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET P-CH 60V 38A TO3PF. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for FQAF47P06

Description：MOSFET P-CH 60V 38A TO3PF
Series：QFET®
Mfr：onsemi
Package：Tube
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：38A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：26mOhm @ 19A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：110 nC @ 10 V
Vgs (Max)：±25V
Input Capacitance (Ciss) (Max) @ Vds：3600 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：100W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-3PF
Package / Case：TO-3P-3 Full Pack

Single FETs, MOSFETs datasheet and documents for FQAF47P06

FQAF47P06

Single FETs, MOSFETs Overview

The FQAF47P06 is a P-Channel enhancement mode power MOSFET manufactured using planar stripe DMOS technology. It features a -60V drain-source voltage and a continuous drain current of -38A at 25°C case temperature. The device exhibits a maximum on-resistance of 0.026Ω at VGS = -10V. Key electrical parameters include a typical gate charge of 84nC, a reverse transfer capacitance of 320pF, and a single pulsed avalanche energy rating of 820mJ. It operates within a junction temperature range of -55°C to +175°C.

Single FETs, MOSFETs Feature Summary

Utilizes proprietary planar stripe DMOS technology to minimize on-state resistance and enhance switching performance.
Capable of withstanding high energy pulses in both avalanche and commutation modes.
Features improved dv/dt capability for robust operation during rapid voltage transitions.

Single FETs, MOSFETs Applications

Automotive electronics
DC/DC converters
High efficiency switching for power management in portable products

Single FETs, MOSFETs Procurement Notes

Verify the specific manufacturer origin, as this component was originally developed by Fairchild Semiconductor. Confirm that the datasheet revision matches your design requirements. Ensure thermal management solutions align with the specified junction-to-case thermal resistance values provided in the official documentation.

Single FETs, MOSFETs Selection Notes

Select this component for low-voltage applications requiring efficient power management. Consider the -60V rating and -38A current capacity for suitable load conditions. Evaluate the thermal resistance characteristics against your system's heat dissipation capabilities to ensure reliable operation within the specified temperature limits.

Single FETs, MOSFETs Part Context

This part belongs to the QFET family of power transistors. It is designed for general-purpose switching applications where low on-resistance and fast switching speeds are critical. The TO-3PF package provides a robust mechanical structure for through-hole mounting in various electronic assemblies.

Single FETs, MOSFETs Replacement Considerations

Check for equivalents such as the FQP47P06 or FQB47P06 from other manufacturers. Verify pinout compatibility and ensure that electrical parameters like RDS(on) and breakdown voltage meet or exceed the original specifications.