FQD19N10LTM

Single FETs, MOSFETs Overview

The UMW FQD19N10LTM is an N-Channel enhancement mode power MOSFET manufactured using proprietary planar stripe and DMOS technology. It features a Drain-Source Voltage (VDSS) of 100V and a continuous Drain Current (ID) of 15.6A at TC = 25°C. The device exhibits low on-state resistance, with RDS(ON) less than 100mΩ at VGS = 10V and less than 110mΩ at VGS = 5V. Key electrical characteristics include a typical total gate charge (Qg) of 14 nC and reverse transfer capacitance (Crss) of 35 pF. It supports a single pulsed avalanche energy (EAS) of 220 mJ and operates within a junction temperature range of -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

• Utilizes advanced planar stripe and DMOS technology to minimize on-state resistance and enhance switching performance.
• Provides superior high avalanche energy strength for robust operation in demanding environments.
• Features low gate charge and low Crss for efficient drive requirements and fast switching capabilities.

Single FETs, MOSFETs Applications

• Switched mode power supplies
• Audio amplifier circuits
• DC motor control systems
• Variable switching power applications

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering code matches the required package and delivery mode. Confirm that the TO-252 package dimensions align with your PCB footprint design. Ensure thermal management strategies account for the specified thermal resistance values under your operating conditions. Check for any specific handling or storage requirements outlined in the manufacturer's documentation before integration.

Single FETs, MOSFETs Selection Notes

Select this component when designing circuits requiring a 100V N-Channel MOSFET with high current handling capabilities up to 15.6A. Consider its low RDS(ON) for improved efficiency in power conversion applications. Evaluate the thermal performance based on your expected case and ambient temperatures. Verify compatibility with your gate drive voltage levels, particularly noting the thresholds for VGS = 5V and 10V operations.

Single FETs, MOSFETs Part Context

This part belongs to the family of N-Channel enhancement mode power MOSFETs produced by UMT Semiconductor Co., Limited. These devices are engineered for general-purpose power switching applications where efficiency and reliability are critical. The use of proprietary DMOS technology distinguishes these components within the broader market of discrete semiconductor power devices.

Single FETs, MOSFETs Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. Consult official distributor databases or manufacturer cross-reference guides for potential alternatives if this specific part number is unavailable.