FQD8P10TM_SB82052

$0.31

Description：MOSFET P-CH 100V 6.6A DPAK
Series：QFET®
Mfr：onsemi
Package：Tape & Reel (TR)

SKU:86e0b451aa5e Category: Single FETs, MOSFETs Brand: onsemi

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

FQD8P10TM_SB82052 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET P-CH 100V 6.6A DPAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for FQD8P10TM_SB82052

Description：MOSFET P-CH 100V 6.6A DPAK
Series：QFET®
Mfr：onsemi
Package：Tape & Reel (TR)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：6.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：530mOhm @ 3.3A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：15 nC @ 10 V
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：470 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：2.5W (Ta), 44W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-252AA
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

Single FETs, MOSFETs datasheet and documents for FQD8P10TM_SB82052

FQD8P10TM_SB82052

Single FETs, MOSFETs Overview

The onsemi FQD8P10TM_SB82052 is a P-Channel enhancement mode power MOSFET utilizing proprietary planar stripe DMOS technology. It features a -100V drain-source voltage (V_DSS) and a continuous drain current of -6.6A at T_C=25°C. The device achieves a low on-resistance (R_DS(on)) of 0.53Ω at V_GS=-10V, with a typical gate charge of 12nC. It supports a pulse drain current of -26.4A and includes 100% avalanche testing for reliability.

Single FETs, MOSFETs Feature Summary

Utilizes onsemi's proprietary planar stripe DMOS technology to optimize switching performance and minimize conduction losses.
Capable of sustaining high energy pulses in both avalanche and commutation modes due to robust internal structure.
Features improved dv/dt capability to handle rapid voltage transitions effectively.
Manufactured in compliance with AEC-Q101 standards for automotive electronic applications.

Single FETs, MOSFETs Applications

Audio amplifiers
High-efficiency DC/DC converters
DC motor control circuits

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix SB82052 against official manufacturer documentation to confirm exact packaging configuration and marking details. Ensure compatibility with existing PCB footprints and thermal management requirements before integration. Cross-reference absolute maximum ratings with system operating conditions to prevent overstress.

Single FETs, MOSFETs Selection Notes

Select this component for low-voltage applications requiring efficient power switching with minimal heat generation. The low gate charge facilitates faster switching speeds, reducing dynamic losses in high-frequency converter designs. Consider the package type and thermal resistance when designing for continuous current loads exceeding room temperature thresholds.

Single FETs, MOSFETs Part Context

This part belongs to the QFET® series from onsemi, designed for general-purpose power switching. It complements other devices in the lineup by offering a balance of voltage rating and current handling in a compact surface-mount package suitable for modern electronics manufacturing.

Single FETs, MOSFETs Replacement Considerations

Check for direct pin-compatible alternatives within the same voltage and current class if supply constraints exist. Verify that any substitute maintains similar R_DS(on) and gate charge characteristics to ensure circuit performance stability.