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FQPF6N60C is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Fairchild Semiconductor. Its product description is MOSFET N-CH 600V 5.5A TO220F. Review the specifications below when checking this part for your BOM.
The FQPF6N60C is an N-channel enhancement mode MOSFET manufactured by Fairchild Semiconductor. It features a maximum drain-source voltage of 600 V and a continuous drain current of 5.5 A. The device utilizes TO-220F surface-mount packaging with three pins. Key electrical parameters include a maximum on-resistance of 2 Ω, a typical gate charge of 16 nC at 10 V, and a maximum power dissipation of 48 W. It operates within a temperature range of -55 °C to +150 °C.
Verify the specific manufacturer lot code and date code against your supply chain requirements. Confirm that the component matches the TO-220F footprint dimensions exactly. Ensure the datasheet revision aligns with your design specifications. Check for any RoHS compliance documentation if required by your manufacturing standards. Validate pinout orientation before PCB integration.
Select this component when a 600V rating is necessary for high-voltage applications. Consider the 2 Ω on-resistance for thermal management in low-current scenarios. The TO-220F form factor suits automated surface-mount assembly processes. Evaluate the 5.5 A current limit against peak load demands. Compare gate charge characteristics with driver capabilities.
This part belongs to the QFET family of power MOSFETs from Fairchild Semiconductor. These devices are designed using planar stripe DMOS technology to minimize on-state resistance. The series targets high-efficiency switch-mode power supplies and general-purpose switching applications requiring reliable high-voltage performance.
Direct substitutes include FQD6N60C and FQA10N60C. Verify pin compatibility and thermal resistance values before substitution. Ensure the alternative device meets or exceeds the 600V voltage rating.
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