FQU13N06LTU-WS

$1.36

Description：MOSFET N-CH 60V 11A IPAK
Series：QFET®
Mfr：onsemi
Package：Tube

SKU:7b454b0b2b17 Category: Single FETs, MOSFETs Brand: onsemi

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Product introduction

FQU13N06LTU-WS is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET N-CH 60V 11A IPAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for FQU13N06LTU-WS

Description：MOSFET N-CH 60V 11A IPAK
Series：QFET®
Mfr：onsemi
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：11A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：5V, 10V
Rds On (Max) @ Id, Vgs：115mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：6.4 nC @ 5 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：350 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：2.5W (Ta), 28W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：IPAK
Package / Case：TO-251-3 Short Leads, IPAK, TO-251AA

Single FETs, MOSFETs datasheet and documents for FQU13N06LTU-WS

FQU13N06LTU-WS

Single FETs, MOSFETs Overview

The FQU13N06LTU-WS is a single N-channel enhancement mode MOSFET manufactured by onsemi. It features a 60V drain-source breakdown voltage and supports a continuous drain current of 11A at case temperature. The device exhibits a maximum on-resistance of 115 milliohms and a gate charge of 6.4 nanocoulombs. Designed for through-hole mounting, it utilizes a TO-251-3 package. The component operates within a junction temperature range from -55°C to +150°C with a power dissipation rating of 2.5W.

Single FETs, MOSFETs Feature Summary

Single N-channel configuration with built-in body diode
Low on-resistance optimized for efficient conduction
Enhancement mode operation for standard logic control
Through-hole installation capability in compact packaging

Single FETs, MOSFETs Applications

DC-DC converter circuits
Motor drive applications
Power switching modules

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix designation when sourcing this component, as it indicates particular manufacturing or packaging variations. Confirm that the TO-251-3 package dimensions align with your board layout requirements. Ensure thermal management strategies account for the specified 2.5W power dissipation limit under expected operating conditions. Cross-reference the manufacturer's latest documentation to confirm current production status and availability constraints.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring moderate current handling with low voltage ratings. The TO-251-3 package offers a balance between thermal performance and space efficiency for through-hole implementations. Evaluate the 115 milliohm on-resistance against your specific conduction loss requirements. Consider the 6.4 nanocoulomb gate charge when determining driver capabilities for switching frequency targets.

Single FETs, MOSFETs Part Context

This part belongs to the FQU series of N-channel MOSFETs from onsemi. The series focuses on general-purpose power switching applications. The TO-251-3 package provides a robust mechanical solution for through-hole assembly. The component represents a standard offering for low-voltage power management tasks.