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FST10080 is listed in the Diode Arrays range at ChipApex. The manufacturer field lists GeneSiC Semiconductor. Its product description is DIODE MOD SCHOT 80V 100A TO249AB. Review the specifications below when checking this part for your BOM.
The GeneSiC Semiconductor FST10080 is a silicon power Schottky diode rated for an average forward current of 100 A and a repetitive peak reverse voltage of 80 V. It features a maximum instantaneous forward voltage of 0.84 V at Tj = 150 °C and a peak forward surge current capability of 1000 A per leg. The device operates within a junction temperature range of -55 °C to +150 °C, with a thermal resistance from junction to case of 1.0 °C/W per leg.
Verify the specific part number against official GeneSiC Semiconductor documentation to confirm electrical ratings and package dimensions. Ensure compatibility with mounting hardware requirements for the TO-249AB style. Confirm that the supplier provides traceable manufacturing data consistent with the original component specifications.
Select this component when an 80 V blocking voltage and 100 A continuous current rating are required in a TO-249AB package. Consider the 1.0 °C/W thermal resistance for heatsink design calculations. Evaluate the 0.84 V forward voltage drop at elevated temperatures for efficiency optimization in high-current applications.
The FST10080 belongs to the FST100 series of silicon power Schottky diodes manufactured by GeneSiC Semiconductor. This series includes variants ranging from 45 V to 100 V reverse voltage while maintaining a consistent 100 A forward current rating across all models.
Compatible substitutes include other 80 V, 100 A Schottky diodes in the TO-249AB package. Verify pinout compatibility and thermal resistance values before substitution.
The maximum operating junction temperature is +150 °C.
No, the FST10080 is not ESD sensitive.
The thermal resistance from junction to case is 1.0 °C/W per leg.
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