GB10MPS17-247

$7.78

Description：DIODE SIL CARB 1700V 50A TO2472
Series：SiC Schottky MPS™
Mfr：GeneSiC Semiconductor
Package：Tube

SKU:1c4e2f0d7142 Category: Single Diodes Brand: GeneSiC Semiconductor

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Product introduction

GB10MPS17-247 is listed in the Single Diodes range at ChipApex. The manufacturer field lists GeneSiC Semiconductor. Its product description is DIODE SIL CARB 1700V 50A TO2472. Review the specifications below when checking this part for your BOM.

Single Diodes specifications for GB10MPS17-247

Description：DIODE SIL CARB 1700V 50A TO2472
Series：SiC Schottky MPS™
Mfr：GeneSiC Semiconductor
Package：Tube
Technology：SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)：1700 V
Current - Average Rectified (Io)：50A
Voltage - Forward (Vf) (Max) @ If：1.8 V @ 10 A
Speed：No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)：0 ns
Current - Reverse Leakage @ Vr：12 µA @ 1700 V
Capacitance @ Vr, F：669pF @ 1V, 1MHz
Mounting Type：Through Hole
Package / Case：TO-247-2
Supplier Device Package：TO-247-2
Operating Temperature - Junction：-55°C ~ 175°C
Grade：-
Qualification：-

Single Diodes datasheet and documents for GB10MPS17-247

GB10MPS17-247

Single Diodes Overview

The GB10MPS17-247 is a Silicon Carbide Schottky MPS™ diode rated for 1700 V repetitive peak reverse voltage and 10 A continuous forward current. It features a TO-247-2 package with a junction-to-case thermal resistance of 0.55 °C/W. The device exhibits a typical forward voltage of 1.8 V at 10 A and 25°C, rising to 2.1 V at 175°C. Total capacitive charge reaches 108 nC at 1200 V reverse bias. Switching time remains under 10 ns at 600 V and 1200 V. Reverse leakage current is typically 10 µA at 175°C.

Single Diodes Feature Summary

Enhanced surge and avalanche robustness
Temperature independent fast switching
Positive temperature coefficient of forward voltage
Zero reverse recovery current

Single Diodes Applications

EV Fast Chargers
Solar Inverters
Motor Drives
Switched Mode Power Supply (SMPS)
Induction Heating and Welding

Single Diodes Procurement Notes

Verify the specific datasheet revision date against the manufacturer's official records before finalizing design integration. Confirm compliance documentation availability for RoHS and REACH requirements relevant to your target market regulations. Ensure that the TO-247-2 mounting torque specifications are strictly adhered to during assembly to maintain optimal thermal performance and mechanical integrity.

Single Diodes Selection Notes

Select this component for high-voltage applications requiring low switching losses and high-temperature operation. The positive temperature coefficient facilitates easy paralleling without thermal runaway concerns. Evaluate the system's cooling requirements based on the specified power dissipation curves and thermal resistance values to ensure reliable long-term performance under varying load conditions.

Single Diodes Part Context

This part belongs to the GeneSiC Semiconductor SiC Schottky MPS™ diode family. It utilizes silicon carbide technology to achieve superior figure of merit compared to traditional silicon devices. The MPS structure combines the benefits of Schottky rectification with the ruggedness of a PIN diode, offering improved efficiency and reliability in demanding power electronics environments.