GB2X50MPS17-227

Diode Arrays Overview

The GB2X50MPS17-227 is a silicon carbide Schottky MPS diode manufactured by GeneSiC Semiconductor. It features a 1700 V repetitive peak reverse voltage and a continuous forward current of 100 A per device at 134°C case temperature. The component utilizes an isolated SOT-227 package with a thermal resistance of 0.39 °C/W per leg. Electrical characteristics include a maximum forward voltage of 2.1 V at 50 A and 175°C, and a total capacitive charge of 1076 nC.

Diode Arrays Feature Summary

• Temperature-independent fast switching behavior
• Positive temperature coefficient of forward voltage for easy parallel operation
• Enhanced surge and avalanche robustness
• Zero reverse recovery current

Diode Arrays Applications

• EV Fast Chargers
• Solar Inverters
• Wind Energy Converters
• Motor Drives
• Pulsed Power

Diode Arrays Procurement Notes

Verify the specific datasheet revision against the manufacturer's official website to ensure all electrical parameters match design requirements. Confirm that the SOT-227 mounting torque specifications are adhered to during assembly to maintain isolation integrity and thermal performance. Check RoHS and REACH compliance documentation for regulatory alignment in target markets.

Diode Arrays Selection Notes

Select this component for high-voltage applications requiring 1700 V blocking capability. The dual-leg configuration supports higher power density designs compared to single devices. Ensure the cooling system can handle the specified power dissipation limits at the intended operating junction temperatures to maintain reliability.

Diode Arrays Part Context

This part belongs to the SiC Schottky MPS series from GeneSiC Semiconductor. It represents a high-power discrete solution designed for demanding power electronics environments. The technology combines the benefits of Schottky rectification with MPS structure improvements for better ruggedness.

Diode Arrays Replacement Considerations

Direct substitutes must match the 1700V rating, 100A current capacity, and SOT-227 package dimensions. Verify equivalent thermal resistance and forward voltage characteristics to ensure circuit compatibility without redesign.

Diode Arrays FAQ

What is the maximum non-repetitive avalanche energy rating?

The non-repetitive avalanche energy rating is 1301 mJ per leg when tested with an inductance of 1.0 mH and a current of 50 A.

Does the device exhibit reverse recovery charge?

No, the device exhibits zero reverse recovery current due to its Schottky barrier construction.

What is the isolation voltage specification?

The isolation voltage is 3000 V RMS for 1 second or 2500 V RMS for 60 seconds at 50/60 Hz.