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GIB2404HM3/I is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Vishay General Semiconductor - Diodes Division. Its product description is DIODE ARRAY GP 200V 16A TO263AB. Review the specifications below when checking this part for your BOM.
The GIB2404HM3/I is a dual common cathode ultrafast plastic rectifier manufactured by Vishay General Semiconductor. It features a D2PAK (TO-263AB) package and is AEC-Q101 qualified for automotive applications. The device provides a maximum repetitive peak reverse voltage of 200 V and an average forward rectified current of 16 A per diode at a case temperature of 125 °C. Key electrical characteristics include a maximum reverse recovery time of 35 ns, a peak forward surge current of 125 A, and a typical junction capacitance of 85 pF.
Verify the specific suffix HM3 indicates AEC-Q101 qualification rather than commercial grade. Confirm the base part number matches the requested dual common cathode topology. Ensure the ordering code aligns with the required tape and reel packaging format for automated assembly processes.
Select this component when a dual common cathode arrangement is required within a single D2PAK footprint. The ultrafast recovery characteristics make it suitable for high-frequency operation where standard recovery diodes would generate excessive heat. Verify thermal management requirements against the specified junction-to-case thermal resistance.
This component belongs to the GIB series of ultrafast rectifiers from Vishay. It utilizes the TO-263AB mechanical outline to provide robust surface-mount mounting capabilities. The HM3 designation specifically denotes compliance with automotive quality standards and halogen-free material composition.
GIB2404-M3/I
The maximum operating junction and storage temperature range is -65 °C to +150 °C.
The HM3 suffix indicates that the device is AEC-Q101 qualified for automotive applications, whereas the M3 suffix denotes commercial grade qualification.
The typical junction capacitance per diode is 85 pF, measured at 4 V reverse bias and 1 MHz frequency.
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