GSFH60R190

$2.23

Description：MOSFET, N-CH, SINGLE, 20.00A, 60
Series：-
Mfr：Good-Ark Semiconductor
Package：Tube

SKU:92b91ab3a9ad Category: Single FETs, MOSFETs Brand: Good-Ark Semiconductor

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

GSFH60R190 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Good-Ark Semiconductor. Its product description is MOSFET, N-CH, SINGLE, 20.00A, 60. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for GSFH60R190

Description：MOSFET, N-CH, SINGLE, 20.00A, 60
Series：-
Mfr：Good-Ark Semiconductor
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：600 V
Current - Continuous Drain (Id) @ 25°C：20A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：190mOhm @ 10A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：39 nC @ 10 V
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：1174 pF @ 100 V
FET Feature：-
Power Dissipation (Max)：66W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-220-3
Package / Case：TO-220-3

Single FETs, MOSFETs datasheet and documents for GSFH60R190

GSFH60R190

Single FETs, MOSFETs Overview

The GSFH60R190 is a 600V N-Channel MOSFET manufactured by Good-Ark Semiconductor. It features a maximum drain-source voltage (VDS) of 600V and a continuous drain current (ID) of 20A at steady-state conditions with a case temperature of 25°C. The device exhibits a typical on-resistance (RDS(ON)) of 0.16Ω at VGS=10V and ID=10A, with a maximum limit of 0.19Ω. Key electrical parameters include a gate threshold voltage range of 2.0V to 4.0V, total gate charge (Qg) of 39nC, and a pulsed drain current capability of 80A. The component is housed in a TO-220 package.

Single FETs, MOSFETs Feature Summary

Utilizes advanced MOSFET process technology to achieve high cell density and low on-resistance for improved efficiency.
Designed for fast switching performance combined with low gate charge characteristics.
Features reverse body recovery capabilities suitable for demanding power conversion environments.

Single FETs, MOSFETs Applications

High efficiency switched mode power supplies
General purpose power switching applications

Single FETs, MOSFETs Procurement Notes

Verify the specific datasheet revision and manufacturing date code upon ordering, as product specifications may evolve. Confirm that the TO-220 package dimensions align with your PCB footprint requirements. Ensure thermal management solutions account for the junction-to-case thermal resistance values provided in the official documentation to maintain safe operating temperatures during operation.

Single FETs, MOSFETs Selection Notes

Select this component when designing circuits requiring a 600V breakdown voltage with moderate current handling capabilities around 20A. Consider the 0.19Ω maximum RDS(ON) for conduction loss calculations and the 39nC gate charge for driver selection. Evaluate the thermal performance based on the intended ambient temperature and cooling method, as the device operates within a -55°C to +150°C junction temperature range.

Single FETs, MOSFETs Part Context

This part belongs to the family of 600V N-Channel MOSFETs offered by Good-Ark Semiconductor. These devices are engineered using modern semiconductor fabrication techniques to balance voltage blocking capabilities with low resistive losses. The TO-220 packaging facilitates through-hole mounting, providing robust mechanical stability and efficient heat dissipation pathways for industrial and commercial power electronics designs.