GT020N10TL

$2.67

Description：MOSFET N-CH 100V 300A 330W 2.0M(
Series：SGT
Mfr：Goford Semiconductor
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:2f9fceb3dc58 Category: Single FETs, MOSFETs Brand: Goford Semiconductor

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

GT020N10TL is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Goford Semiconductor. Its product description is MOSFET N-CH 100V 300A 330W 2.0M(. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for GT020N10TL

Description：MOSFET N-CH 100V 300A 330W 2.0M(
Series：SGT
Mfr：Goford Semiconductor
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：300A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：2mOhm @ 100A, 10V
Vgs(th) (Max) @ Id：3.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：160 nC @ 10 V
Vgs (Max)：20V
Input Capacitance (Ciss) (Max) @ Vds：10800 pF @ 50 V
FET Feature：-
Power Dissipation (Max)：330W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：-
Package / Case：-

Single FETs, MOSFETs datasheet and documents for GT020N10TL

GT020N10TL

Single FETs, MOSFETs Overview

The GT020N10TL is an N-channel enhancement mode power MOSFET manufactured by Goford Semiconductor. It utilizes advanced trench technology to achieve low gate charge and excellent on-resistance. The device features a TOLL-8L package with a drain-source voltage of 100V and a continuous drain current of 300A at 25°C case temperature. At VGS = 10V, the maximum on-resistance is 1.9mΩ. It supports a pulsed drain current of 1200A and has a single pulse avalanche energy rating of 812mJ. The component operates within a junction temperature range of -55°C to 150°C.

Single FETs, MOSFETs Feature Summary

Advanced trench technology for low gate charge and high performance
High current carrying capacity in a compact TOLL-8L package
100% avalanche tested for reliability
RoHS compliant with UL 94 V-0 flammability rated epoxy

Single FETs, MOSFETs Applications

Power switches
DC/DC converters

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packaging details, as standard reels may contain 2000 pieces per reel. Ensure the procurement channel sources directly from authorized distributors or the manufacturer to guarantee authenticity. Confirm that the delivered components match the GT020N10T marking and TOLL-8L physical dimensions specified in the datasheet before integration into production lines.

Single FETs, MOSFETs Selection Notes

Select this component when designing circuits requiring high efficiency and low conduction losses at 100V. The TOLL-8L package offers superior thermal dissipation compared to traditional packages, supporting up to 330W power dissipation. Consider the low gate charge characteristics for high-frequency switching applications where drive power consumption is critical. Verify that the system's thermal management can handle the junction-to-case thermal resistance of 0.38°C/W under load.

Single FETs, MOSFETs Part Context

This part belongs to the Goford Semiconductor N-channel MOSFET series designed for power management solutions. The TOLL-8L package is engineered to provide a small footprint while maintaining large current carrying capacity. It is positioned for use in modern power supplies and data center infrastructure where space constraints and thermal performance are primary design drivers.