H5N2522LSTL-E

Single FETs, MOSFETs Overview

The H5N2522LSTL-E is a silicon N-channel power MOSFET designed for high-speed power switching applications. It features a maximum drain-source voltage of 250V and a continuous drain current of 20A at ambient temperature. The device exhibits a typical on-resistance of 180mΩ, ensuring efficient conduction with minimal power loss. Packaged in a surface-mount LDPAK (TO-263) format, it offers thermal performance rated at 75W under case conditions. Key electrical characteristics include a typical input capacitance of 1300pF, supporting rapid switching transitions in compact circuit designs.

Single FETs, MOSFETs Feature Summary

• High-voltage capability with 250V drain-source breakdown
• Low on-resistance for improved efficiency
• Surface-mount LDPAK package for automated assembly

Single FETs, MOSFETs Applications

• Industrial power supplies
• Consumer electronics power management
• High-speed power switching circuits

Single FETs, MOSFETs Procurement Notes

Verify the complete part number including the suffix to ensure correct packaging and material compliance. Confirm that the LDPAK variant matches the specific lead-frame vendor requirements for your manufacturing process. Check RoHS status and carrier type specifications against your assembly line capabilities before ordering.

Single FETs, MOSFETs Selection Notes

Select this component when a 250V rating and 20A current capacity are required in a surface-mount form factor. The low on-resistance makes it suitable for applications prioritizing conduction efficiency. Ensure the thermal design accommodates the 75W case power dissipation limit under expected operating loads.

Single FETs, MOSFETs Part Context

This device belongs to Renesas Electronics' discrete semiconductor portfolio, specifically within their power MOSFET lineup. It serves as a single-channel solution for medium-power switching tasks. The product integrates advanced silicon technology to balance voltage handling with low resistance characteristics.

Single FETs, MOSFETs Replacement Considerations

Consult official cross-reference documentation for verified substitutes. Ensure any replacement maintains compatible pinout, voltage ratings, and package dimensions.