Diode Arrays HERF1007GH product image

HERF1007GH

$1.31
  • Description:DIODE ARRAY GP 800V 10A ITO220AB
  • Series:-

SKU:d529a7ba695c Category: Brand:

  
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HERF1007GH is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Taiwan Semiconductor Corporation. Its product description is DIODE ARRAY GP 800V 10A ITO220AB. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for HERF1007GH

  • Description:DIODE ARRAY GP 800V 10A ITO220AB
  • Series:-
  • Mfr:Taiwan Semiconductor Corporation
  • Package:Tube
  • Diode Configuration:1 Pair Common Cathode
  • Technology:Standard
  • Voltage - DC Reverse (Vr) (Max):800 V
  • Current - Average Rectified (Io) (per Diode):10A
  • Voltage - Forward (Vf) (Max) @ If:1.7 V @ 5 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):80 ns
  • Current - Reverse Leakage @ Vr:10 µA @ 800 V
  • Operating Temperature - Junction:-55°C ~ 150°C
  • Mounting Type:Through Hole
  • Package / Case:TO-220-3 Full Pack, Isolated Tab
  • Supplier Device Package:ITO-220AB
  • Grade:Automotive
  • Qualification:AEC-Q101

Diode Arrays datasheet and documents for HERF1007GH

HERF1007GH

Diode Arrays Overview

The HERF1007GH is a glass passivated high-efficiency rectifier manufactured by Taiwan Semiconductor Corporation. It features a dual common cathode configuration housed in a TO-220AB-3 package for through-hole mounting. The device supports an average forward current of 10 A and a repetitive peak reverse voltage of 700 V. Key electrical parameters include a maximum forward voltage of 1.7 V, a reverse leakage current of 10 µA, and a fast recovery time of 80 ns. It withstands a maximum surge current of 125 A and operates within a junction temperature range of -55°C to +150°C.

Diode Arrays Feature Summary

  • Glass passivation provides mechanical strength and protection against moisture and chemical damage.
  • High efficiency design ensures low forward voltage drop and reduced power loss.
  • Fast recovery characteristics minimize switching losses and improve circuit performance.

Diode Arrays Applications

  • High-frequency DC-to-DC converters
  • Free-wheeling diodes in motor drive circuits
  • General-purpose rectification in industrial power supplies

Diode Arrays Procurement Notes

Verify the specific suffix 'GH' against the manufacturer's official datasheet to confirm the exact pinout and packaging specifications. Ensure that the procurement documentation explicitly states compliance with RoHS directives and halogen-free requirements as defined by IEC 61249-2-21 standards.

Diode Arrays Selection Notes

Select this component when a dual common cathode configuration is required for space-constrained designs. The TO-220AB-3 package offers robust thermal dissipation capabilities suitable for high-current applications. Consider the 80 ns recovery time for high-speed switching environments where standard rectifiers would introduce excessive losses.

Diode Arrays Part Context

This part belongs to the HER series of high-efficiency rectifiers from Taiwan Semiconductor. The series utilizes glass passivation technology to enhance reliability and durability under harsh operating conditions. The dual common cathode arrangement allows for efficient use of board space in bridge or full-wave rectifier topologies.

Diode Arrays Replacement Considerations

Cross-reference with other HERF1007 variants from the same manufacturer to ensure identical pin configurations and electrical ratings before substitution. Verify that any alternative component meets the same thermal and voltage stress requirements.

Diode Arrays FAQ

What is the recovery time of the HERF1007GH?

The HERF1007GH has a specified fast recovery time of 80 ns.

Is the HERF1007GH available in a surface-mount package?

No, the HERF1007GH is designed for through-hole mounting using the TO-220AB-3 package.

What is the maximum surge current rating?

The device can withstand a maximum non-repetitive surge current of 125 A.

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