Diode Arrays HFA16TA60C product image

HFA16TA60C

$2.93
  • Description:DIODE ARRAY GP 600V 8A TO-220-3
  • Series:HEXFRED®

SKU:33287389b321 Category: Brand:

  
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HFA16TA60C is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Vishay General Semiconductor - Diodes Division. Its product description is DIODE ARRAY GP 600V 8A TO-220-3. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for HFA16TA60C

  • Description:DIODE ARRAY GP 600V 8A TO-220-3
  • Series:HEXFRED®
  • Mfr:Vishay General Semiconductor - Diodes Division
  • Package:Tube
  • Diode Configuration:1 Pair Common Cathode
  • Technology:Standard
  • Voltage - DC Reverse (Vr) (Max):600 V
  • Current - Average Rectified (Io) (per Diode):8A (DC)
  • Voltage - Forward (Vf) (Max) @ If:1.7 V @ 8 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):55 ns
  • Current - Reverse Leakage @ Vr:5 µA @ 600 V
  • Operating Temperature - Junction:-55°C ~ 150°C
  • Mounting Type:Through Hole
  • Package / Case:TO-220-3
  • Supplier Device Package:TO-220-3
  • Grade:-
  • Qualification:-

Diode Arrays datasheet and documents for HFA16TA60C

HFA16TA60C

Diode Arrays Overview

The HFA16TA60C is a HEXFRED ultrafast soft recovery diode featuring a dual common cathode configuration in a TO-220AB package. It provides a maximum repetitive reverse voltage of 600 V and supports a continuous forward current of 8 A per leg (16 A total). The device exhibits a typical reverse recovery time of 18 ns at 25 °C, with a peak reverse recovery charge of 65 nC. Maximum forward voltage drop is rated at 1.7 V at 8 A and 25 °C. Operating junction temperature ranges from -55 °C to +150 °C.

Diode Arrays Feature Summary

  • Ultrafast soft recovery characteristics designed to minimize electromagnetic interference and switching losses
  • Extremely low peak reverse recovery current and stored charge values for enhanced efficiency
  • No snap-off behavior during the recovery tail portion of operation
  • Qualified for industrial level applications with robust thermal performance

Diode Arrays Applications

  • Companion diodes for IGBTs and MOSFETs in high-speed switching circuits
  • High frequency power supplies and DC-DC converters
  • Inverter systems and motor drives requiring high efficiency
  • Applications demanding reduced snubber circuitry and component count

Diode Arrays Procurement Notes

Verify the specific part marking and datasheet revision against official Vishay documentation before procurement. Confirm that the TO-220AB mounting torque specifications are met during installation to ensure reliable thermal contact. Check for any updated environmental compliance statements or pinout variations in the latest manufacturer release notes prior to finalizing orders.

Diode Arrays Selection Notes

Select this component when designing circuits requiring fast recovery times below 20 ns with low reverse recovery charge. Ensure the thermal management system can handle the specified junction-to-case thermal resistance under continuous load conditions. Verify that the 600 V rating accommodates voltage transients in the target application environment without exceeding absolute maximum ratings.

Diode Arrays Part Context

This device belongs to the HEXFRED product line from Vishay High Power Products, engineered for superior rectification performance compared to standard silicon rectifiers. The technology utilizes advanced epitaxial construction to achieve low noise and high speed. It serves as a specialized solution for modern power electronics where switching efficiency and electromagnetic compatibility are critical design constraints.

Diode Arrays Replacement Considerations

Direct substitutes include the HFA16TA60C-012 and HFA16TA60C-017PBF, which share identical electrical ratings and pin configurations. Verify mechanical dimensions and thermal characteristics match the existing footprint requirements before implementing any alternative part numbers in the design.

Diode Arrays FAQ

What is the typical reverse recovery time for the HFA16TA60C?

The typical reverse recovery time is 18 ns when tested at a junction temperature of 25 °C with an forward current of 1.0 A and a rate of change of current of 200 A/µs.

How is the internal configuration of the HFA16TA60C arranged?

The device features a dual common cathode configuration, providing two independent anodes sharing a single common cathode terminal within the TO-220AB package.

What is the maximum operating junction temperature?

The maximum operating junction and storage temperature range extends up to +150 °C.

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