HMC396

HMC396

  • Description:IC RF AMP VSAT 0HZ-8GHZ DIE
  • Series:-
  • Mfr:Analog Devices Inc.
  • Package:Tray

SKU:70d5a29cfede Category: Brand:

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Product Detailed Parameters

  • Description:IC RF AMP VSAT 0HZ-8GHZ DIE
  • Series:-
  • Mfr:Analog Devices Inc.
  • Package:Tray
  • Frequency:0Hz ~ 8GHz
  • P1dB:14dBm
  • Gain:12dB
  • Noise Figure:6dB
  • RF Type:VSAT
  • Voltage - Supply:5V
  • Current - Supply:56mA
  • Test Frequency:0Hz ~ 4GHz
  • Mounting Type:Surface Mount
  • Package / Case:Die
  • Supplier Device Package:Die

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HMC396

Overview

The HMC396 is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) Gain Block MMIC amplifier operating from DC to 8 GHz. It provides 12 dB of gain with a P1dB compression point of 14 dBm and an OIP3 of 25 dBm. The device requires a 5 V supply and draws 56 mA. Key performance metrics include a noise figure of 6 dB, input return loss of 15 dB, and power dissipation of 339 mW. Designed as a die for integration, it supports cascaded 50-ohm gain stages in wideband applications.

Feature Summary

  • Utilizes GaAs InGaP HBT technology for high-performance amplification
  • Operates across a wide frequency range from DC to 8 GHz
  • Designed as a bare die for flexible system integration
  • Supports cascaded configuration as a 50-ohm gain stage

Applications

  • VSAT communication systems
  • Wideband low-power RF front ends
  • Cascaded gain block implementations
  • Microwave monolithic integrated circuit designs

Procurement Notes

Verify the specific package type and handling requirements when sourcing this component. As a die-level product, proper assembly infrastructure is necessary. Confirm availability status through authorized distributors, as supply conditions may vary. Ensure that the ordering information matches the exact part number and any required suffixes for packaging or testing specifications.

Selection Notes

Select the HMC396 for applications requiring wideband amplification up to 8 GHz with moderate gain. Consider its 56 mA current consumption and 339 mW power dissipation for thermal management. The 12 dB gain and 14 dBm P1dB suit intermediate gain stages. Evaluate the need for die-level integration versus packaged alternatives based on system design constraints.

Part Context

This component belongs to Analog Devices' family of RF amplifiers utilizing InGaP HBT technology. It serves as a gain block MMIC designed for microwave frequencies. The HMC396 complements other devices in the series by offering wideband operation suitable for satellite and wireless communications where compact, high-performance amplification is required.

Replacement Considerations

No public confirmed substitute part numbers are available.

HMC396HMC396

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