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HMC396 is listed in the RF Amplifiers range at ChipApex. The manufacturer field lists Analog Devices Inc.. Its product description is IC RF AMP VSAT 0HZ-8GHZ DIE. Review the specifications below when checking this part for your BOM.
The HMC396 is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) Gain Block MMIC amplifier operating from DC to 8 GHz. It provides 12 dB of gain with a P1dB compression point of 14 dBm and an OIP3 of 25 dBm. The device requires a 5 V supply and draws 56 mA. Key performance metrics include a noise figure of 6 dB, input return loss of 15 dB, and power dissipation of 339 mW. Designed as a die for integration, it supports cascaded 50-ohm gain stages in wideband applications.
Verify the specific package type and handling requirements when sourcing this component. As a die-level product, proper assembly infrastructure is necessary. Confirm availability status through authorized distributors, as supply conditions may vary. Ensure that the ordering information matches the exact part number and any required suffixes for packaging or testing specifications.
Select the HMC396 for applications requiring wideband amplification up to 8 GHz with moderate gain. Consider its 56 mA current consumption and 339 mW power dissipation for thermal management. The 12 dB gain and 14 dBm P1dB suit intermediate gain stages. Evaluate the need for die-level integration versus packaged alternatives based on system design constraints.
This component belongs to Analog Devices' family of RF amplifiers utilizing InGaP HBT technology. It serves as a gain block MMIC designed for microwave frequencies. The HMC396 complements other devices in the series by offering wideband operation suitable for satellite and wireless communications where compact, high-performance amplification is required.
No public confirmed substitute part numbers are available.
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